In this article, we investigate the molecular beam epitaxy growth of unannealed 1.12 eV InGaAsN solar cells. The impact of the growth temperature, the As/III ratio and the bismuth used as a surfactant are reported. An in-situ curvature measurement setup enables to monitor and ensures a constant N incorporation during the InGaAsN growth. Ex-situ characterization results suggest that a high As/III ratio ensures good optoelectronic properties and that the growth temperature has a strong influence on the residual doping of the dilute nitride layer. Under AM0 > 870 nm and without antireflection coatings, our best InGaAsN solar cells exhibit Jsc and Voc values of 7.94 mA/cm2 and 0.375 V, respectively. Considering no internal reflection and no grid shading, generation up to 12 mA/cm2 in a multijunction solar cell can be expected, which is the highest value ever reported for As-grown InGaAsN cells to our knowledge.

中文翻译：

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通过分子束外延生长用于多结太阳能电池的 InGaAsN 子电池


在本文中，我们研究了未退火 1.12 eV InGaAsN 太阳能电池的分子束外延生长。报告了生长温度、As/III 比率和用作表面活性剂的铋的影响。原位曲率测量装置能够监控并确保 InGaAsN 生长过程中恒定的 N 掺入。非原位表征结果表明，高 As/III 比可确保良好的光电性能，并且生长温度对稀氮化物层的残余掺杂有很大影响。在 AM0 > 870 nm 且无减反射涂层的情况下，我们最好的 InGaAsN 太阳能电池的 Jsc 和 Voc 值分别为 7.94 mA/cm2 和 0.375 V。考虑到无内反射和无栅极遮蔽，多结太阳能电池的发电量预计可达 12 mA/cm2，据我们所知，这是迄今为止报道的 As-grown InGaAsN 电池的最高值。