In the modeling of PV modules under shading and low illumination, a complete description of reverse bias behavior at the cell level is critical to understanding module response. This is particularly important when dealing with high voltage configurations such as tandem and shingled modules. Current simulation studies often do not account for the effects of incident light when dealing with operating voltages approaching cell breakdown. In this article, we investigate the illumination dependence of leakage current at the onset of breakdown in crystalline silicon solar cells. A study of the most popular cell technologies in the market today reveals a light induced effect under reverse bias that is prominent for p-type and small for n-type cells. Additionally, this effect is found to be larger in mono c-Si than multi c-Si cells. Because this phenomenon is not captured in current breakdown models such as Bishop's equation, we propose a split-cell model to describe partial shading in p-type cells. The outlined approach divides the cell into two parallel regions and is advantageous for its procedural simplicity as well as its ability to generalize effects from complex shading profiles.

中文翻译：

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硅太阳能电池反向漏电流的光照依赖性

在阴影和低照度下的 PV 模块建模中，电池级反向偏置行为的完整描述对于理解模块响应至关重要。这在处理串联和叠瓦模块等高压配置时尤为重要。当前的模拟研究在处理接近电池击穿的工作电压时通常没有考虑入射光的影响。在本文中，我们研究了晶体硅太阳能电池在击穿开始时漏电流对光照的依赖性。对当今市场上最流行的电池技术的一项研究揭示了反向偏压下的光诱导效应，这种效应在 p 型电池中很突出，而在 n 型电池中很小。此外，发现这种效应在单晶硅电池中比在多晶硅电池中更大。由于目前的击穿模型（例如 Bishop 方程）中没有捕捉到这种现象，因此我们提出了一种分裂电池模型来描述 p 型电池中的部分阴影。概述的方法将单元格分为两个平行区域，并且有利于其程序简单以及从复杂的阴影轮廓中概括效果的能力。