Identification of electronic processes at buried interfaces of charge-selective contacts is crucial for photovoltaic and photocatalysis research. Here, transient surface photovoltage (SPV) is used to study the passivation of different hole-selective carbazole-based SAMs. It is shown that transient SPV and transient photoluminescence provide complementary information on charge transfer kinetics and trapping/de-trapping mechanisms, and that trap-assisted non-radiative recombination losses originate from electron trapping at the SAM-modified ITO/perovskite interface. The hole transfer rates and the density of interface electron traps, obtained by fitting SPV transients with a minimalistic kinetic model, depended strongly on the SAM’s chemical structure, and densities of interface traps as low as 10⁹ cm⁻², on par with highly passivated c-Si surfaces, were reached for Me-4PACz, previously used in record perovskite/silicon tandem solar cells. The extracted hole transfer rate constants and interface trap densities correlated well with the corresponding fill factors and open-circuit voltages of high-efficiency solar cells.

识别电荷选择性接触埋入界面处的电子过程对于光伏和光催化研究至关重要。在这里，瞬态表面光电压 (SPV) 用于研究不同空穴选择性咔唑基 SAM 的钝化。结果表明，瞬态 SPV 和瞬态光致发光提供了关于电荷转移动力学和俘获/解俘机制的补充信息，并且俘获辅助的非辐射复合损失源于 SAM 改性的 ITO/钙钛矿界面处的电子俘获。通过将 SPV 瞬变与极简动力学模型拟合而获得的空穴转移率和界面电子陷阱的密度在很大程度上取决于 SAM 的化学结构和低至 10 ⁹ cm的界面陷阱密度^-2，与高度钝化的 c-Si 表面相当，Me-4PACz 达到了，以前用于创纪录的钙钛矿/硅串联太阳能电池。提取的空穴传输速率常数和界面陷阱密度与高效太阳能电池的相应填充因子和开路电压密切相关。