The texture of the Ni monostanogermanide phase on a Ge(100) substrate was evaluated during a solid-state reaction, with a focus on the impact of Sn addition. Complementary X-ray diffraction analyses involving in situ X-ray diffraction, in-plane reciprocal space maps (RSMs) and pole figures were used to that end. A sequential growth of the phases for the Ni/Ge(Sn) system was found. An Ni-rich phase formed first, followed by the NiGe(Sn) phase. The NiGe and NiGe(Sn) layers were polycrystalline with different out-of-plane orientations. The number of out-of-plane diffraction peaks decreased with the Sn content, while the preferred orientation changed. In-plane RSM analyses confirmed these results. Sn addition modified the out-of-plane and in-plane orientations. Pole figure analysis revealed that numerous epitaxial texture components were present for the Ni/Ge system, while Sn addition reduced the number of epitaxial texture components. On the other hand, segregated Sn crystallized with an epitaxial alignment with the Ge substrate underneath.

中文翻译：

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Ge(100)上NiGe(Sn)的织构及其随Sn含量的演变

在固态反应期间评估了 Ge(100) 基底上的 Ni 单锡锗化物相的织构，重点是添加 Sn 的影响。涉及原位的补充 X 射线衍射分析为此使用 X 射线衍射、平面倒易空间图 (RSM) 和极图。发现 Ni/Ge(Sn) 系统的相的顺序生长。首先形成富 Ni 相，然后是 NiGe(Sn) 相。NiGe 和 NiGe(Sn) 层是具有不同面外取向的多晶。面外衍射峰的数量随着Sn含量的增加而减少，而择优取向发生了变化。平面内 RSM 分析证实了这些结果。Sn 添加修改了面外和面内方向。极图分析表明，Ni/Ge 系统存在大量外延织构成分，而添加 Sn 减少了外延织构成分的数量。另一方面，偏析的 Sn 与下方的 Ge 衬底外延排列结晶。