One of the key challenges to promote the economic viability of Cu(In,Ga)Se₂ (CIGS) solar cells is the multi-stage co-evaporation process required to make a high quality absorber layer. One phenomenon of interest is dynamic recrystallization using a fluxing agent. While these techniques have significantly improved material systems like CdTe, their impact on other nonmetallic systems are relatively unexplored. In this paper, we demonstrate that InCl₃ can be used effectively to recrystallize CIGS for temperature as low as 450 °C, but that it also induces a modification of the surface composition. Analyses, notably via glancing incidence X-ray diffraction and secondary ion mass spectrometry, show an indium enriched surface as well as a modified alkali profile.

提高 Cu(In,Ga)Se ₂ (CIGS) 太阳能电池经济可行性的关键挑战之一是制造高质量吸收层所需的多阶段共蒸发工艺。一种有趣的现象是使用助熔剂进行动态重结晶。虽然这些技术显着改善了 CdTe 等材料系统，但它们对其他非金属系统的影响相对尚未探索。在本文中，我们证明了 InCl ₃可以有效地用于在低至 450 °C 的温度下重结晶 CIGS，但它也会引起表面成分的改变。分析，特别是通过掠入射 X 射线衍射和二次离子质谱分析，显示富铟表面以及改良的碱分布。