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Thickness dependence of the spintronic terahertz emission from Ni/Pt bilayer grown on MgO via electron beam deposition
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-08-19 , DOI: 10.35848/1882-0786/ac1b0d
John Paul Ferrolino 1 , Neil Irvin Cabello 2 , Alexander De Los Reyes 2 , Hannah Bardolaza 2 , Ivan Cedrick Verona 2 , Valynn Katrine Mag-usara 3 , Jessica Pauline Afalla 3 , Miezel Talara 3 , Hideaki Kitahara 3 , Wilson Garcia 2 , Armando Somintac 2 , Arnel Salvador 2 , Masahiko Tani 3 , Elmer Estacio 2
Affiliation  

We report on the spintronic terahertz (THz) emission from a Ni/Pt bilayer on MgO grown via electron beam deposition. The films were grown with varying Ni thicknesses with a constant Pt thickness. The nominal Ni thickness values of 3, 5, 7, 9, 15, and 23nm exhibited thickness-dependence of the THz emission intensities which was well-fitted with a model by Torosyan et al. Thickness-dependence was also observed for the peak frequencies and bandwidth characteristics. These results are consistent with previously reported MBE-grown ferromagnetic/nonmagnetic metal spintronic THz emitters utilizing the inverse spin-Hall effect.



中文翻译:

通过电子束沉积在 MgO 上生长的 Ni/Pt 双层自旋电子太赫兹发射的厚度依赖性

我们报告了通过电子束沉积生长的 MgO 上 Ni/Pt 双层的自旋电子太赫兹 (THz) 发射。薄膜以不同的 Ni 厚度和恒定的 Pt 厚度生长。3、5、7、9、15 和 23nm 的标称 Ni 厚度值表现出 THz 发射强度的厚度依赖性,这与 Torosyan 等人的模型非常吻合。还观察到峰值频率和带宽特性的厚度依赖性。这些结果与先前报道的利用逆自旋霍尔效应 MBE 生长的铁磁/非磁性金属自旋电子太赫兹发射器一致。

更新日期:2021-08-19
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