Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. This work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.

超低电压降隧道结 (TJ) 用于在单个器件中实现具有多达三个有源区的多有源区蓝光发光二极管 (LED)。多有源区蓝色 LED 是通过金属有机化学气相沉积 (MOCVD) 单片生长的，没有生长中断。这是 MOCVD 生长的三结 LED 的首次演示。优化的 TJ 设计实现了接近理想的电压和接近结数的 EQE 缩放。这项工作表明，通过适当的 TJ 设计，可以通过级联多个基于 III 族氮化物的 LED 来提高高输出功率操作时的壁插效率。