Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review,ACS Applied Electronic Materials

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Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-08-18 , DOI: 10.1021/acsaelm.1c00393
Amaresh Das ₁ , Durga Basak ₁

Affiliation

Unlike the majority of the silicon-based electronic devices, optoelectronic devices are predominantly made using III–V and II–VI semiconductor compounds and their alloys because of their direct bandgap. Among these, zinc oxide (ZnO) is a multifunctional wide bandgap II–VI semiconductor material that has distinctive properties, such as large excitonic binding energy, high-sensitivity, nontoxicity, and good compatibility, which favors it to be considered for various optoelectronic applications including photoelectrochemical (PEC) water splitting, light-emitting diodes (LEDs), photovoltaics, and photodetectors. Though the research concentrated on ZnO started many decades ago, the renewed interest is rekindled only with the availability of high-quality single-crystal substrates, easy growth techniques of various nanostructures, and reports on p-type ZnO. Therefore, ZnO is being treated as a concentrated research focus during the last two decades by researchers encompassing a vast field starting from luminescent materials, energy storage and conversion, to biomedical sensors, and so on. Ion beam irradiation is a fruitful approach to modify the properties of semiconducting oxides by introducing not only impurities but also defects, strains, structural transitions, and others. The necessity of a timely in-depth and critical review of the progress on ion implantation in ZnO is the origin of this Review, which focuses on the recent implantation efforts in nanostructured ZnO thin films as well as single crystals. In the beginning, with an introduction to the general principles of ion implantation, this Review presents interactions and distribution of implantation-induced defects in ZnO. Next, comprehensive analyses on the influence of ion implantation on the optical, electrical properties, and optoelectronic applications including PEC water splitting and LEDs have been revealed. Most importantly, in each section from a “state-of-the-art” of the domain, some critical connections have been provided between the results of the theoretical simulations of the implanted ion-induced defects and the reported data, which in particular would be able to offer significant insights for both theoretical and experimental research community working with the oxide semiconductors. At the end, a summary with future directions for utilizing ion implantation for achieving ZnO thin-film-based high-performance devices has been presented. By including a sufficient breadth and depth of literature coverage in this Review, we believe that it would also tend to reveal the inconsistencies in the extant body of research.

中文翻译：

氧化锌离子注入在光电应用中的功效：综述

与大多数硅基电子器件不同，光电子器件主要使用 III-V 和 II-VI 半导体化合物及其合金制造，因为它们具有直接带隙。其中，氧化锌 (ZnO) 是一种多功能宽带隙 II-VI 半导体材料，具有激子结合能大、灵敏度高、无毒、相容性好等特点，有利于考虑用于各种光电应用包括光电化学 (PEC) 水分解、发光二极管 (LED)、光伏和光电探测器。尽管专注于 ZnO 的研究在几十年前就开始了，但只有在高质量单晶衬底的可用性、各种纳米结构的简单生长技术、和关于 p 型 ZnO 的报告。因此，在过去的 20 年里，ZnO 被研究人员视为一个集中的研究焦点，研究人员涵盖了从发光材料、能量存储和转换到生物医学传感器等广泛领域。离子束辐照不仅引入杂质，而且引入缺陷、应变、结构转变等，是一种改变半导体氧化物性质的有效方法。对 ZnO 中离子注入进展的及时深入和批判性审查的必要性是本次审查的起源，其重点是最近在纳米结构 ZnO 薄膜和单晶中的注入工作。首先介绍离子注入的一般原理，本综述介绍了 ZnO 中注入诱导缺陷的相互作用和分布。接下来，揭示了离子注入对光学、电学特性和光电应用（包括 PEC 水分解和 LED）的影响的综合分析。最重要的是，在该领域“最新技术”的每个部分中，已在注入离子诱导缺陷的理论模拟结果与报告数据之间提供了一些关键联系，这尤其会能够为研究氧化物半导体的理论和实验研究团体提供重要的见解。最后，总结了利用离子注入实现基于 ZnO 薄膜的高性能器件的未来方向。

更新日期：2021-09-28

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