An ecofriendly wet-chemical methodology for the transfer of chemical vapor deposition–grown, two-dimensional (2D) graphene layers onto desired surfaces is proposed and demonstrated by transferring the graphene monolayers (GMLs) onto Si/SiO₂ substrates. The quality and purity of transferred graphene layers along with their uniformity and electrical characteristics were examined. Furthermore, the areal uniformity of the transferred layers is explored by fabricating the devices with a configuration of graphene/insulator/metal (GIM). The transferred GMLs over Si/SiO₂ substrates exhibited good uniformity with high chemical purity along with excellent electrical characteristics. The GIM-based devices fabricated over planar substrates showed high conductivity and low leakage current density. Based on these demonstrated outcomes, it is emphasized that the proposed methodology can be adopted for the transfer of any 2D materials irrespective of their size by avoiding chemical exposure and failure of the fabrication process that are the major hurdles in the conventional approach.

通过将石墨烯单层 (GML) 转移到 Si/SiO ₂衬底上，提出并证明了一种用于将化学气相沉积生长的二维 (2D) 石墨烯层转移到所需表面的环保湿化学方法。检查了转移石墨烯层的质量和纯度以及它们的均匀性和电气特性。此外，通过制造具有石墨烯/绝缘体/金属（GIM）配置的器件来探索转移层的面积均匀性。Si/SiO _{2 上}转移的 GML基板表现出良好的均匀性、高化学纯度以及优异的电气特性。在平面衬底上制造的基于 GIM 的器件显示出高导电性和低漏电流密度。基于这些证明的结果，强调的是，通过避免化学暴露和制造过程失败，这是传统方法中的主要障碍，可以采用所提出的方法来转移任何 2D 材料，而不管其尺寸如何。