In this work, a detailed investigation of RF and linearity analysis of junction-less Gate All Around (JLGAA) MOSFETs through SILVACO TCAD device simulator have been demonstrated. The impact of different metal gate work functions on various RF parameters such as drain current, transconductance (g_m), output conductance (g_d), gate capacitances (C_gs and C_gd), transconductance generation factor (TGF), cut-off frequency (f_T), intrinsic gain(A_v) and Gain trans-conductance frequency product (GTFP) are investigated. Furthermore, the impact of different metal gate work functions(ω_M) on various linearity parameters such as g_m2, g_m3, VIP2, VIP3, IIP3, IMD3 were also investigated. It is observed that lower value of metal gate work function is suitable for radio frequency integrated circuit (RFIC) applications.

在这项工作中，通过 SILVACO TCAD 设备模拟器对无结全环栅 (JLGAA) MOSFET 的射频和线性度分析进行了详细研究。不同金属栅极功函数对各种射频参数的影响，例如漏极电流、跨导 (g _m )、输出电导 (g _d )、栅极电容（C _gs和 C _gd）、跨导生成因子 (TGF)、截止研究了频率 (f _T )、固有增益 (A _v ) 和增益跨导频率积 (GTFP)。此外，不同金属栅极功函数(ω _M ) 对各种线性参数如 g _m2、g还研究了_m3、VIP2、VIP3、IIP3、IMD3。据观察，较低的金属栅极功函数值适用于射频集成电路 (RFIC) 应用。