This paper describes the use of flash lamp annealing (FLA) to fabricate high-Sn content GeSn n-MOSFETs. We exploit FLA processing for both impurity activation and for the solid-phase growth (SPG) of the GeSn channel. High-Sn incorporation of up to 12% is achieved by overcoming the solid-solubility limit of Sn in Ge (1%), and high-quality n⁺-source/drain junctions were obtained by P implantation and subsequent FLA. Consequently, we achieved well-behaved transistor operation of the SPG-Ge_0.88Sn_0.12 n-MOSFETs, with an on/off current ratio one order of magnitude higher than for conventional rapid thermal annealing processing.

本文介绍了使用闪光灯退火 (FLA) 制造高锡含量的 GeSn n-MOSFET。我们利用 FLA 处理来进行杂质活化和 GeSn 通道的固相生长 (SPG)。通过克服 Sn 在 Ge (1%) 中的固溶度限制，实现了高达 12% 的高 Sn 掺入，并且通过 P 注入和随后的 FLA 获得了高质量的 n ^{+源/漏结。}_{因此，我们实现了 SPG-Ge 0.88} Sn _0.12 n-MOSFET的良好晶体管操作，其开/关电流比比传统快速热退火处理高一个数量级。