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MgNb2O6 Modified K0.5Na0.5NbO3 Eco-Piezoceramics: Scalable Processing, Structural Distortion and Complex Impedance at Resonance
ChemistryOpen ( IF 2.5 ) Pub Date : 2021-08-17 , DOI: 10.1002/open.202100089
Antonio Iacomini 1 , Sebastiano Garroni 1 , Nina Senes 1 , Gabriele Mulas 1 , Stefano Enzo 1 , Matteo Poddighe 1 , Álvaro García 2 , José F Bartolomé 2 , Lorena Pardo 2
Affiliation  

In this work, piezoceramics of the lead-free composition K0.5Na0.5NbO3 with an increasing amount of MgNb2O6 (0, 0.5, 1, 2 wt.%) were prepared through conventional solid-state synthesis and sintered in air atmosphere at 1100 °C. The effect of magnesium niobate addition on structure, microstructure and piezoelectric properties was evaluated. The ceramics maintain the orthorhombic Amm2 phase for all compositions, while an orthorhombic Pbcm secondary phase was found for increasing the concentration of MgNb2O6. Our results show that densification of these ceramics can be significantly improved up to 94.9 % of theoretical density by adding a small amount of magnesium-based oxide (1 wt.%). Scanning electron microscopy morphology of the 1 wt.% system reveals a well-packed structure with homogeneous grain size of ∼2.72 μm. Dielectric and piezoelectric properties become optimal for 0.5–1.0 wt.% of MgNb2O6 that shows, with respect to the unmodified composition, either higher piezoelectric coefficients, lower anisotropy and relatively low piezoelectric losses (d33=97 pC N−1; d31=−36.99 pC N−1 and g31=−14.04×10−3 mV N−1; Qp(d31)=76 and Qp(g31)=69) or enhanced electromechanical coupling factors (kp=29.06 % and k31=17.25 %).

中文翻译:


MgNb2O6 改性 K0.5Na0.5NbO3 生态压电陶瓷:可扩展处理、结构畸变和谐振时的复阻抗



在这项工作中,通过传统的固态合成方法制备了无铅组合物 K 0.5 Na 0.5 NbO 3以及增加量的 MgNb 2 O 6 (0, 0.5, 1, 2 wt.%) 的压电陶瓷,并在空气中烧结。 1100°C 的气氛。评估了铌酸镁添加对结构、显微结构和压电性能的影响。所有成分的陶瓷均保持斜方晶系 Amm2 相,同时发现斜方晶系 Pbcm 第二相可提高 MgNb 2 O 6的浓度。我们的结果表明,通过添加少量镁基氧化物(1 wt.%),这些陶瓷的致密化可以显着提高,高达理论密度的 94.9%。 1 wt.% 系统的扫描电子显微镜形态显示出填充良好的结构,晶粒尺寸均匀,约为 2.72 μm。 0.5-1.0 wt.% 的 MgNb 2 O 6的介电和压电性能变得最佳,这表明,相对于未改性的成分,具有更高的压电系数、更低的各向异性和相对较低的压电损耗(d 33 =97 pC N -1 ; d 31 =−36.99 pC N −1和 g 31 =−14.04×10 -3 mV N −1 ;Q p (d 31 )=76 和 Q p (g 31 )=69) 或增强的机电耦合因子 (k p =29.06%并且k 31 =17.25%)。
更新日期:2021-08-17
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