Ultrafast All-Optical Switching in the Visible Spectrum with 6H Silicon Carbide,ACS Photonics

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Ultrafast All-Optical Switching in the Visible Spectrum with 6H Silicon Carbide
ACS Photonics ( IF 6.5 ) Pub Date : 2021-08-17 , DOI: 10.1021/acsphotonics.1c00605
Long Li _{1,

2} , Xiao Guo ₁ , Pengbo Ding ₁ , Zeyu Peng ₁ , Xihan Chen ₁ , Yi Li ₃ , Michael P. Nielsen ₄ , Liang Guo _{1,

5}

Affiliation

Silicon carbide (SiC) is one of the most promising wide-band gap semiconductors for future technological applications, with the potential for high-temperature and low-loss photonic devices. In this study, we investigated the ultrafast visible light all-optical switching in 6H-SiC, in which nondegenerate two-photon absorption appeared to be dominant. Using an 820 nm femtosecond laser beam as the modulation source, differential transmission on the order of 10% was achieved across the visible spectrum from 420 to 720 nm with the highest modulation depth reaching 27%. The dependence of the optical switching performance on wavelength, fluence, and polarization has been illustrated and analyzed in details. Our results provide an in-depth guideline for exploring SiC, of which the nonlinear optical properties could help to realize ultrafast all-optical switching devices in the visible regime.

中文翻译：

使用 6H 碳化硅在可见光谱中实现超快全光切换

碳化硅 (SiC) 是未来技术应用中最有前途的宽带隙半导体之一，具有用于高温和低损耗光子器件的潜力。在这项研究中，我们研究了 6H-SiC 中的超快可见光全光开关，其中非简并双光子吸收似乎占主导地位。使用 820 nm 飞秒激光束作为调制源，在 420 至 720 nm 的可见光谱范围内实现了 10% 数量级的差分传输，最高调制深度达到 27%。已经详细说明和分析了光开关性能对波长、通量和偏振的依赖性。我们的结果为探索 SiC 提供了深入的指导，

更新日期：2021-10-20

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