Electric Field-Induced Area Scalability toward the Multilevel Resistive Switching,Advanced Materials Interfaces

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Electric Field-Induced Area Scalability toward the Multilevel Resistive Switching
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2021-08-17 , DOI: 10.1002/admi.202100664
Ranveer Singh _{1,

2} , Mohit Kumar _{1,

2} , Shahid Iqbal _{1,

2} , Hyunwoo Kang _{1,

2} , Unjeong Kim _{1,

2} , Ji‐Yong Park _{1,

3} , Hyungtak Seo _{1,

2}

Affiliation

Nonvolatile memory devices based on resistive switching with fast switching speed and high density have driven extensive research that is potentially ideal for data-centric applications such as neuromorphic computing. However, due to uncontrolled filament formation, resistive random access memories (RRAM) still suffer from instability and reproducibility. In this study, NiO layer is added to the WO₃-based RRAM layer to confine the conducting path for multilevel resistive switching. The current-voltage characteristics show the multilevel resistive switching, which is further confirmed by conductive atomic force microscopy measurements at nanoscale. At low voltages, few localized conducting channels are formed (in small area) within the oxide film while at the higher voltages they are distributed throughout the film and the active surface area increases from 4.5 to 75%. Kelvin probe force microscopy was employed to confirm nanoscale variations in surface potential, which are responsible for spatial current variation. Furthermore, it is found that the charge trapping/detrapping is the main governing mechanism and the conducting paths are formed gradually with increasing applied bias. We propose a strategy to achieve stable and reproducible electric field-induced multilevel memory storage which will be utilized for the development of ultrahigh density multilevel nonvolatile storage and neuromorphic computing.

中文翻译：

面向多电平电阻开关的电场感应区域可扩展性

基于具有快速开关速度和高密度的电阻开关的非易失性存储设备推动了广泛的研究，这些研究可能是神经形态计算等以数据为中心的应用的理想选择。然而，由于不受控制的灯丝形成，电阻随机存取存储器 (RRAM) 仍然存在不稳定和可重复性的问题。在本研究中，将 NiO 层添加到 WO ₃基于 RRAM 层来限制多级电阻开关的导电路径。电流-电压特性显示出多级电阻切换，这通过纳米级导电原子力显微镜测量得到进一步证实。在低电压下，氧化膜内几乎没有局部导电通道（小面积）形成，而在更高电压下，它们分布在整个膜中，活性表面积从 4.5% 增加到 75%。采用开尔文探针力显微镜来确认表面电位的纳米级变化，这是造成空间电流变化的原因。此外，发现电荷俘获/释放是主要的控制机制，并且随着施加的偏压的增加，导电路径逐渐形成。

更新日期：2021-09-12

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