Photonic field-effect transistor (FET) memory devices offer unique advantages owing to their solution processability, low cost production, and their lightweight and structural flexibility. Despite the plethora of research demonstrated the photon based programming process, limited reports are available for photoinduced recovery mechanism in such devices. To investigate the influence of polymer electret design on photonic memory performance, poly(9,9-dioctylfluorene) (PFO)–block–poly (vinylphenyl oxadiazole) (POXD) conjugated block copolymers were employed to a photonic FET memory with n-type semiconducting channel. The studied device exhibited bistable ON/OFF current states after electrical programming and photoinduced recovery (erasing) processes. The device operating mechanism was elaborated by comparing the device performance with respective electrets of PFO-b-POXD and PFO-b-polystyrene (PS) and PFO homopolymer. We found that PFO-b-POXD can efficiently generate photoexciton under UV illumination to neutralize the trapped hole, and assuage the hole trapping propensity of PFO segment, simultaneously. By optimizing the POXD content in the block copolymer, a decent memory ratio (I_ON/I_OFF) of ~10⁵ was achieved after 10⁴ s, indicating its superior long-term stability and data discernibility. This research shows the judicious strategy to design polymer electret for photonic memory, and it opens up the possibility of developing photonic memory, human perception and futuristic communication systems using simple, convenient and reliable optoelectronic technique.

中文翻译：

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用聚芴嵌段聚（乙烯基苯基恶二唑）嵌段共聚物作为光子晶体管存储器件中的驻极体实现快速光诱导恢复

光子场效应晶体管 (FET) 存储器件由于其解决方案可加工性、低成本生产以及重量轻和结构灵活性而具有独特的优势。尽管大量的研究证明了基于光子的编程过程，但对于此类设备中的光诱导恢复机制的报道有限。为了研究聚合物驻极体设计对光子存储性能的影响，聚（9,9-二辛基芴）（PFO）-嵌段-聚（乙烯基苯恶二唑）（POXD）共轭嵌段共聚物被用于具有 n 型半导体的光子 FET 存储器。渠道。所研究的器件在电编程和光诱导恢复（擦除）过程后表现出双稳态开/关电流状态。b -POXD 和 PFO- b -聚苯乙烯 (PS) 和 PFO 均聚物。我们发现 PFO- b -POXD 可以在紫外光照射下有效地产生光激子以中和被捕获的空穴，同时减轻 PFO 片段的空穴捕获倾向。通过优化嵌段共聚物中的 POXD 含量，在 10 ⁴后实现了约 10 ^{5的良好记忆比（} I _ON / I _{OFF ）} s，表明其优越的长期稳定性和数据可辨别性。这项研究显示了设计用于光子存储器的聚合物驻极体的明智策略，并为使用简单、方便和可靠的光电技术开发光子存储器、人类感知和未来通信系统开辟了可能性。