Transition metal dichalcogenide moiré heterostructures provide an ideal platform to explore the extended Hubbard model¹, where long-range Coulomb interactions play a critical role in determining strongly correlated electron states. This has led to experimental observations of Mott insulator states at half filling^2,3,4 as well as a variety of extended Wigner crystal states at different fractional fillings^5,6,7,8,9. However, a microscopic understanding of these emerging quantum phases is still lacking. Here we describe a scanning tunnelling microscopy (STM) technique for the local sensing and manipulation of correlated electrons in a gated WS₂/WSe₂ moiré superlattice, which enables the experimental extraction of fundamental extended Hubbard model parameters. We demonstrate that the charge state of the local moiré sites can be imaged by their influence on the STM tunnelling current. In addition to imaging, we are also able to manipulate the charge state of correlated electrons. When we ramp the bias on the STM tip, there is a local discharge cascade of correlated electrons in the moiré superlattice, which allows us to estimate the nearest-neighbour Coulomb interaction. Two-dimensional mapping of the moiré electron charge states also enables us to determine the on-site energy fluctuations at different moiré sites. Our technique should be broadly applicable to many semiconductor moiré systems, offering a powerful tool for the microscopic characterization and control of strongly correlated states in moiré superlattices.

过渡金属二硫属化物莫尔异质结构为探索扩展的 Hubbard 模型¹提供了一个理想的平台，其中长程库仑相互作用在确定强相关电子态中起着关键作用。这导致了对半填充^2,3,4的莫特绝缘体状态以及不同部分填充^5,6,7,8,9的各种扩展维格纳晶体状态的实验观察。然而，仍然缺乏对这些新兴量子相的微观理解。_{在这里，我们描述了一种扫描隧道显微镜 (STM) 技术，用于在门控 WS 2} /WSe ₂中对相关电子进行局部传感和操作莫尔超晶格，它可以实验提取基本的扩展哈伯德模型参数。我们证明了局部莫尔位点的电荷状态可以通过它们对 STM 隧穿电流的影响来成像。除了成像，我们还能够操纵相关电子的电荷状态。当我们增加 STM 尖端的偏置时，莫尔超晶格中存在相关电子的局部放电级联，这使我们能够估计最近邻库仑相互作用。莫尔电子电荷状态的二维映射也使我们能够确定不同莫尔位置的现场能量波动。我们的技术应该广泛适用于许多半导体莫尔系统，