当前位置:
X-MOL 学术
›
J. Circuits Syst. Comput.
›
论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
An Ultra-Low-Power, Self-Start-Up DC-DC Boost Converter for Self-Powered IoT Node
Journal of Circuits, Systems and Computers ( IF 1.5 ) Pub Date : 2021-08-14 , DOI: 10.1142/s0218126622500268 Krishna Reddy Komatla 1 , Sreehari Rao Patri 1
Journal of Circuits, Systems and Computers ( IF 1.5 ) Pub Date : 2021-08-14 , DOI: 10.1142/s0218126622500268 Krishna Reddy Komatla 1 , Sreehari Rao Patri 1
Affiliation
This paper presents an ultra-low-power boost converter for self-powered IoT applications to self-start and power-up IoT devices from scratch without any requirement of an external start-up. The proposed converter and its clock generator operate in sub-threshold utilizing bulk-driven technique for low-power operation. The bulk-driven technique improves charge transfer switches for effective switching using auxiliary transistors. This approach enables a MOSFET to operate on supplies lower than its threshold voltage with a significant reduction in the reverse charge transfer and switching loss while increasing the voltage conversion efficiency and output voltage. To validate the performance of the proposed architecture, the post-layout simulation is carried out in standard CMOS 0.18μ m technology. Under low-voltage supply of 0.4 V, the simulated transient output voltage takes 110μ s to reach 1.92 V with 0.15% output voltage ripple, while consuming the power of 772 nW.
中文翻译:
用于自供电物联网节点的超低功耗、自启动 DC-DC 升压转换器
本文介绍了一种用于自供电物联网应用的超低功耗升压转换器,可从零开始自启动和启动物联网设备,无需任何外部启动。所提出的转换器及其时钟发生器利用体驱动技术在亚阈值下运行以实现低功耗运行。体驱动技术改进了电荷转移开关,以便使用辅助晶体管进行有效开关。这种方法使 MOSFET 能够在低于其阈值电压的电源上工作,从而显着降低反向电荷转移和开关损耗,同时提高电压转换效率和输出电压。为了验证所提出架构的性能,在标准 CMOS 0.18 中进行布局后仿真μ 米技术。0.4低压供电下 V,模拟瞬态输出电压取110μ s 达到 1.92 V 与 0.15% 输出电压纹波,同时消耗772的功率 净重。
更新日期:2021-08-14
中文翻译:
用于自供电物联网节点的超低功耗、自启动 DC-DC 升压转换器
本文介绍了一种用于自供电物联网应用的超低功耗升压转换器,可从零开始自启动和启动物联网设备,无需任何外部启动。所提出的转换器及其时钟发生器利用体驱动技术在亚阈值下运行以实现低功耗运行。体驱动技术改进了电荷转移开关,以便使用辅助晶体管进行有效开关。这种方法使 MOSFET 能够在低于其阈值电压的电源上工作,从而显着降低反向电荷转移和开关损耗,同时提高电压转换效率和输出电压。为了验证所提出架构的性能,在标准 CMOS 0.18 中进行布局后仿真