NaCl-Assisted CVD Growth of Large-Area High-Quality Trilayer MoS2 and the Role of the Concentration Boundary Layer,Crystal Growth & Design

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NaCl-Assisted CVD Growth of Large-Area High-Quality Trilayer MoS2 and the Role of the Concentration Boundary Layer
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2021-08-16 , DOI: 10.1021/acs.cgd.1c00390
Aditya Singh ₁ , Madan Sharma ₁ , Rajendra Singh _{1,

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Affiliation

Direct growth of wafer-scale high-quality 2D-layered materials (2DLMs) on the SiO₂/Si substrate is still a challenge. The chemical vapor deposition (CVD) technique has shown a significant role in achieving a large-area continuous film of 2DLMs. CVD growth requires the optimization of several growth parameters, namely, temperature, amount of precursors, pressure, carrier gas flow, and distance between the reactants. However, the role of the boundary layer of reactant concentration has not been explored yet. The amount of precursors which leads to the formation of the reactant concentration boundary layer has a noteworthy impact in controlling the thickness of the growing material. Here, we report the role of the concentration boundary layer to achieve large-area MoS₂ in NaCl-assisted CVD growth at low temperature. Control of boundary layer thickness has led to the synthesis of monolayer, bilayer, trilayer, and bulk MoS₂ films and flakes in our single-zone CVD at atmospheric pressure. We believe that our approach may lead to synthesize other wafer-scale 2DLMs that will pave the way for nano- and optoelectronics.

中文翻译：

NaCl 辅助 CVD 生长大面积高质量三层 MoS2 和浓度边界层的作用

在 SiO ₂ /Si 衬底上直接生长晶圆级高质量 2D 分层材料 (2DLM)仍然是一个挑战。化学气相沉积 (CVD) 技术在实现 2DLM 的大面积连续薄膜方面发挥了重要作用。CVD 生长需要优化几个生长参数，即温度、前体的数量、压力、载气流量和反应物之间的距离。然而，尚未探索反应物浓度边界层的作用。导致形成反应物浓度边界层的前体量对控制生长材料的厚度具有显着影响。在这里，我们报告了浓度边界层在实现大面积 MoS _{2 中的作用}在低温下 NaCl 辅助的 CVD 生长中。边界层厚度的控制导致在我们的单区 CVD 大气压下合成单层、双层、三层和块状 MoS ₂薄膜和薄片。我们相信我们的方法可能会导致合成其他晶圆级 2DLM，这将为纳米和光电子学铺平道路。

更新日期：2021-09-01

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