Variable energy positron beam with Doppler broadening spectroscopy (DBS) was used to investigate the depth-resolved defects formed by two fluencies of 130 keV N⁺ implanted in Semi Insulating (SI) 6H-SiC. The implanted ions induced damages near the surface and to a depth of 300 nm as simulated by SRIM analysis. Defects recovery, accumulation, and its behavior with two annealing temperatures were also considered. Defect types and its effect on annealing were analyzed from the changes in electron momentum and modeled as layers using variable energy positron fitting (VEPFIT) methods. Inclusion of electric field strength in the fitting procedure supported layer characteristics and the state of charge carriers. Di-vacancies, vacancy complexes observed in the damaged layers were agglomerated at the surface and tend to cure on annealing.

使用多普勒展宽光谱 (DBS) 的可变能量正电子束研究由 130 keV N ^{+ 的}两种通量形成的深度分辨缺陷注入半绝缘（SI）6H-SiC。如SRIM分析所模拟的，注入的离子在表面附近和300nm的深度处引起损伤。还考虑了缺陷恢复、积累及其在两个退火温度下的行为。从电子动量的变化分析缺陷类型及其对退火的影响，并使用可变能量正电子拟合 (VEPFIT) 方法将其建模为层。在拟合过程中包含电场强度支持层特性和电荷载流子的状态。在损坏层中观察到的双空位、空位复合物在表面团聚，并在退火时趋于固化。