A series of novel Mn⁴⁺-doped and Mn⁴⁺/R⁺ co-doped (R = Li, Na, K) CaAl_11.9P_0.1O_19.1 red-emitting phosphors were synthesized by high-temperature solid-state reaction, and their crystal structure, luminescence properties and thermal stability were studied in detail. Under the excitation of the optimal wavelength (396 nm), all phosphors exhibit a strong red-light emission, which corresponds to the ²E_g→⁴A_2g transition of Mn⁴⁺. The optimal Mn⁴⁺ doping concentration was determined to be x = 0.01 in the CaAl_11.9-xP_0.1O_19.1:xMn⁴⁺ phosphor, and excessive dopants will cause concentration quenching due to energy transfer interaction between Mn⁴⁺ ions. The alkali metal charge compensation ions Li⁺, Na⁺ and K⁺ co-doped with Mn⁴⁺ significantly improve the luminescence intensity of CaAl_11.89P_0.1O_19.1:0.01Mn⁴⁺ phosphor, where Na⁺ co-doped phosphor has the strongest luminescence intensity, and K⁺ co-doped phosphor has the longest luminescence lifetime. Due to the ion radius of charge compensation ion R⁺ is closest to that of Ca²⁺ in the host, it is easier to occupy R⁺ for the Ca²⁺ lattice site. R⁺ can eliminate the positive defects caused by Mn⁴⁺ replacing with Al³⁺, thereby keeping charge valance to be neutral. Moreover, Ca_0.9Al_11.89P_0.1O_19.1:0.01Mn⁴⁺,0.1Na⁺ phosphor has excellent color purity (97.0%) and quantum yield (60.7%), indicating that the phosphor has potential application prospects for use in white-light-emitting diodes.

通过高温固相反应合成了一系列新型Mn ⁴⁺掺杂和Mn ⁴⁺ /R ⁺共掺杂(R = Li, Na, K) CaAl _11.9 P _0.1 O _19.1红色荧光粉，并详细研究了它们的晶体结构、发光性能和热稳定性。在最佳波长 (396 nm) 的激发下，所有荧光粉都表现出强烈的红光发射，这对应于Mn ⁴⁺的² E _g → ⁴ A _2g跃迁。 CaAl 中最佳 Mn ⁴⁺掺杂浓度确定为 x = 0.01_{11.9- x} P _0.1 O _19.1 : x Mn ⁴⁺磷光体和过多的掺杂剂会由于Mn ⁴⁺离子之间的能量转移相互作用而导致浓度猝灭。碱金属电荷补偿离子Li ⁺、Na ⁺和K ⁺与Mn ⁴⁺共掺杂显着提高了CaAl _11.89 P _0.1 O _19.1 :0.01Mn ⁴⁺荧光粉的发光强度，其中Na ⁺共掺杂荧光粉的发光强度最强发光强度和 K ⁺共掺杂磷光体具有最长的发光寿命。由于电荷补偿离子R ⁺的离子半径最接近主体中Ca ²⁺的离子半径，因此更容易占据Ca ²⁺晶格位点的R ⁺。R ⁺可以消除由Al ³⁺取代Mn ⁴⁺引起的正缺陷，从而保持电荷价为中性。此外，Ca _0.9 Al _11.89 P _0.1 O _19.1 :0.01Mn ⁴⁺ ,0.1Na ⁺ 荧光粉具有优异的色纯度（97.0%）和量子产率（60.7%），表明该荧光粉在白光发光二极管中具有潜在的应用前景。