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The effect of synthesis temperature on the structural and electrochemical properties of S and N doped rGO electrodes
Fullerenes, Nanotubes and Carbon Nanostructures ( IF 2.3 ) Pub Date : 2021-08-16 , DOI: 10.1080/1536383x.2021.1966418
Arun Kumar Singh 1 , Anubha Sodhiya 1 , Ashish Verma 1
Affiliation  

Abstract

As the demand for alternative energy sources grows, new electrode materials for electrochemical supercapacitors are being developed. Heteroatom doped rGO sheets have attracted much attention in recent time. S and N doped rGO was prepared at various temperatures by a simple and low cost hydrothermal method in the present work. The successful formation of S and N doped rGO sheets is confirmed by structural characterization of prepared samples. The EDX and BET surface analysis shows the optimum doping of S and N and the highest surface area in SNrGO-140 sample, respectively. The electrochemical profile study shows that the SNrGO-140 has the maximum specific capacitance value of 332.5 F/g at a scan rate of 10 mV/s. The result observed suggested that S and N doped rGO prepared at 140 °C is the suitable electrode material to be used in high energy electrochemical supercapacitors.



中文翻译:

合成温度对 S 和 N 掺杂 rGO 电极结构和电化学性能的影响

摘要

随着对替代能源需求的增长,正在开发用于电化学超级电容器的新型电极材料。近年来,杂原子掺杂的rGO片材引起了广泛关注。在目前的工作中,通过简单且低成本的水热法在各种温度下制备了 S 和 N 掺杂的 rGO。通过制备样品的结构表征证实了 S 和 N 掺杂 rGO 片材的成功形成。EDX 和 BET 表面分析分别显示了 S 和 N 的最佳掺杂以及 SNrGO-140 样品中的最高表面积。电化学曲线研究表明,SNrGO-140 在 10 mV/s 的扫描速率下具有 332.5 F/g 的最大比电容值。

更新日期:2021-08-16
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