Double-beta processes in ¹⁸⁴Os and ¹⁹²Os were searched for over 15 851 h at the Gran Sasso National Laboratory (LNGS) of the I.N.F.N. by using a 118g ultra-pure osmium sample installed on the endcap of a 112 cm³ ultra-low-background broad-energy germanium detector. New limits on double-electron capture and electron capture with positron emission in ¹⁸⁴Os were set at the level of lim T _1/2 ∼ 10¹⁶–10¹⁷ years. In particular the 2ν2K and 2ν KL decays of ¹⁸⁴Os to the ground state of ¹⁸⁴W are restricted as T _1/2 ⩾ 3.0 10¹⁶ years and T _1/2 ⩾ 2.0 10¹⁶ years, respectively. A lower limit on the half-life for the double-beta decay of ¹⁹²Os to the first excited level of ¹⁹²Pt was set as lim T _1/2 = 2.0 10²⁰ years at 90% confidence level

在 INFN 的格兰萨索国家实验室 (LNGS) 中，使用安装在 112 cm ³超低端盖上的 118g 超纯锇样品，在¹⁸⁴ Os 和¹⁹² Os 中的双β 过程进行了超过 15 851 小时的搜索-背景宽能锗探测器。¹⁸⁴ Os 中双电子捕获和正电子发射电子捕获的新限制被设置在 lim  T _1/2 ∼ 10 ¹⁶ –10 ¹⁷年的水平。特别是¹⁸⁴ Os 到¹⁸⁴ W基态的 2 ν 2 K和 2 ν KL衰减被限制为 分别为 T _1/2 ⩾ 3.0 10 ¹⁶岁和T _1/2 ⩾ 2.0 10 ¹⁶岁。¹⁹² Os 到第一激发能级¹⁹² Pt的双β衰变半衰期的下限设置为 lim  T _1/2 = 2.0 10 ²⁰年，置信水平为 90%