Driven by high-density and high-reliability demands on three-dimensional (3D) interconnections, electrical and mechanical properties of interconnection structures have been paid more attention. Aiming at the novel enable-3D interconnections realized by Au–Si wafer bonding, this study demonstrates the design, fabrication and test results of testing structures for dimension-define parameters of Au–Si bonds. In order to measure closely-realistic ohmic contact resistances of Au–Si bonds after wafer bonding processes implemented under certain bonding pressures and temperatures, the convex Si structures formed by the local oxidation of silicon process have been designed. Therefrom the specific contact resistance values of Au–Si bonds have been measured as 3.9–8.1 10⁻¹⁰Ω m² for different contact radii (3–20 μm), which indicates the low-resistance potentiality for Au–Si bonds applied on 3D interconnections. On the other hand, two findings on bonding strengths are summarized from finite element simulations and tensile experiments: (a) Au–Si bonding strengths of circular bonding patterns (35–75 MPa) are superior to the ones of square bonding patterns (18–30 MPa) due to the stress concentration phenomenon on four corners of square bonding patterns; (b) there is an inverse relationship between bonding strengths and bonding areas owing to uneven stress distributions in bonding structures. Overall, this study provides a basic optimization design strategy at electrical and mechanical levels for 3D interconnections actualized by Au–Si bonding. Incidentally, these introduced analysis methods are also feasible for homologous Si-based eutectic bonding techniques to extend the forms of 3D interconnections.

在对三维（3D）互连的高密度和高可靠性需求的推动下，互连结构的电气和机械性能越来越受到关注。针对通过 Au-Si 晶片键合实现的新型使能 3D 互连，本研究展示了 Au-Si 键尺寸定义参数测试结构的设计、制造和测试结果。为了在特定键合压力和温度下实施晶片键合工艺后，测量 Au-Si 键的真实欧姆接触电阻，设计了由硅工艺局部氧化形成的凸硅结构。由此测得的 Au-Si 键的特定接触电阻值为 3.9–8.1 10 ^-10 Ω m ²对于不同的接触半径 (3–20 μm)，这表明应用于 3D 互连的 Au-Si 键具有低电阻潜力。另一方面，从有限元模拟和拉伸实验中总结了两个关于键合强度的发现：（a）圆形键合图案（35-75 MPa）的Au-Si键合强度优于方形键合图案（18- 30 MPa) 由于方形粘合图案四个角上的应力集中现象；(b) 由于接合结构中的应力分布不均匀，因此接合强度和接合面积之间存在反比关系。总体而言，这项研究为通过 Au-Si 键合实现的 3D 互连提供了电气和机械层面的基本优化设计策略。顺便，