Hexagonal (2H) silicon (Si) semiconductors have excellent mechanical properties and optically diverse applications due to their structure and quasi-direct bandgap. The 2H-Si has a relatively lower direct band gap of approximately 1.69 eV at the Γ-point in comparison with that of diamond-silicon (i.e. 3.4 eV), but it is not actually a direct bandgap semiconductor. Herein, we report an optical property of wide spectrum light emission in visible and infrared ranges from grown Si crystals with a 2H structure of a ₀ = 0.3824 nm, c ₀ = 0.6257 nm, and c ₀/a ₀ = 1.6362 corresponding to theoretical predictions and experimental results. Obtained via high-resolution transmission electron microscopy measurements, the crystal structure of the grown 2H Si possesses the only stable form of the 2H structure with the characteristic quasi-direct bandgap, achieved using mixed-source hydride vapor phase epitaxy at about 1200 C. Raman, photoluminescence, and electroluminescence spectra, Commission International de l’ Eclairage chromaticity coordinates of light emission, lattice parameters, and the quality of the crystals were evaluated and found to correspond with the predicted results. The reported material has potential applications in optoelectronics.

由于其结构和准直接带隙，六方 (2H) 硅 (Si) 半导体具有优异的机械性能和光学多样化的应用。与金刚石-硅（即 3.4 eV）相比，2H-Si 在 Γ 点的直接带隙相对较低，约为 1.69 eV，但它实际上不是直接带隙半导体。在此，我们报告了具有a ₀ = 0.3824 nm、c ₀ = 0.6257 nm 和c ₀ / a ₀的 2H 结构的生长 Si 晶体在可见光和红外范围内的宽光谱发光的光学特性= 1.6362 对应于理论预测和实验结果。通过高分辨率透射电子显微镜测量获得，生长的 2H Si 的晶体结构具有 2H 结构的唯一稳定形式，具有特征准直接带隙，使用混合源氢化物气相外延在 1200 C 左右实现。拉曼、光致发光和电致发光光谱、国际委员会的发光色度坐标、晶格参数和晶体质量进行了评估，发现与预测结果一致。报道的材料在光电领域具有潜在的应用。