ZnO- and MgZnO-based single- and double-layer heterostructures have been grown using an electron-beam evaporation system. Structural, morphological, optical and electrical characteristics were elaborated for all the configurations. Using x-ray diffraction, it was inferred that a hexagonal wurtzite structure is maintained for both ZnO and MgZnO with fairly good crystallinity. Field emission scanning electron microscopy (FESEM) images showed the homogeneous distribution of particles in ZnO and MgZnO throughout the films. Both atomic force microscopy and FESEM images exhibit a larger size for ZnO particles. The UV emission for ZnO at ∼371 nm and MgZnO at ∼359 nm was anticipated from photoluminescence spectra. The visible photoconductive properties of all the different configurations were studied in the dark and under the illumination of a white light source. The highest responsivities measured for the ZnO/MgZnO/Si structure were 0.242 A W⁻¹ and 0.164 A W⁻¹ for as deposited and annealed at 400 C, respectively. These results show the suitability of bilayer photo detectors for visible light detection.

已经使用电子束蒸发系统生长了基于 ZnO 和 MgZnO 的单层和双层异质结构。详细阐述了所有配置的结构、形态、光学和电学特性。使用 X 射线衍射，推断 ZnO 和 MgZnO 均保持六方纤锌矿结构，具有相当好的结晶度。场发射扫描电子显微镜 (FESEM) 图像显示 ZnO 和 MgZnO 中颗粒在整个薄膜中的均匀分布。原子力显微镜和 FESEM 图像均显示出较大尺寸的 ZnO 颗粒。从光致发光光谱预计 ZnO 在~371 nm 和 MgZnO 在~359 nm 的 UV 发射。在黑暗中和在白光源的照射下研究了所有不同配置的可见光导特性。ZnO/MgZnO/Si 结构的最高响应度为 0.242 AW^-1和 0.164 AW ^{-1 分别}用于沉积和在 400 C 下退火。这些结果表明双层光电探测器适用于可见光探测。