To evaluate the performance of GaNAsBi alloys as solar cell materials, a GaNAsBi double-heterostructure pin solar cell was fabricated using plasma-assisted solid source molecular beam epitaxy. The addition of even a small amount of N (less than 1%) to the GaAsBi alloy significantly reduces the short-circuit current density (J _sc) of the solar cell. However, after thermal annealing, J _sc increases by ∼6.5 times. After thermal annealing, the GaN_0.006As_0.966Bi_0.028 solar cells (bandgap (E _g) = 1.15 eV) exhibited an open-circuit voltage (V _oc) of 0.35 V, J _sc of 10.2 mA cm⁻², and fill factor of 0.56. Based on the Urbach energy of Ga(N)AsBi, the decreased crystallinity associated with the addition of N leads to poor characteristics of GaNAsBi solar cells compared with those GaAsBi solar cells.

为了评估 GaNAsBi 合金作为太阳能电池材料的性能，使用等离子体辅助固体源分子束外延制造了 GaNAsBi 双异质结构 pin 太阳能电池。即使在 GaAsBi 合金中添加少量 N（小于 1%）也能显着降低太阳能电池的短路电流密度 ( J _sc )。然而，在热退火后，J _sc增加了约 6.5 倍。热退火后，GaN _0.006 As _0.966 Bi _0.028太阳能电池（带隙 ( E _g ) = 1.15 eV）的开路电压 ( V _oc ) 为 0.35 V，J _sc为 10.2 mA cm⁻²，填充因子为 0.56。基于 Ga(N)AsBi 的 Urbach 能量，与那些 GaAsBi 太阳能电池相比，与添加 N 相关的结晶度降低导致 GaNAsBi 太阳能电池的特性较差。