This paper demonstrates write-once-read-many-times (WORM) behavior of an Ag/CuO/n⁺-Si memory device. The CuO resistive switching layer with a thickness of 9.7 nm was prepared using a sol–gel process. The device shows a low conduction current of 10⁻¹⁰ A at a read voltage of 1 V. A sudden current increase is observed when the voltage increases to ∼3 V, corresponding to a resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS). After that, the device remains in the LRS. Degradation of the HRS and the LRS is not observed for 10⁴ read cycles. The HRS/LRS resistance ratio is 10⁶, and the data retention time is over 10⁵ s. The abrupt current increase cannot be triggered by a negative bias. The formation of Ag conductive bridges in the CuO layer is responsible for the resistance switching. Statistical analyses are performed to study the distributions of the set voltages and the resistances in the HRS and LRS. The effect of the compliance current on the operating current of the Ag/CuO/n⁺-Si WORM memory is also investigated. The carrier transport mechanisms are found to be dominated by Schottky emission, Ohmic, and SCLC conductions. The energy barrier is 1.066 eV, which is extracted by Schottky emission analysis.

本文展示了 Ag/CuO/n ⁺ -Si 存储器件的一次写入多次读取 (WORM) 行为。使用溶胶-凝胶工艺制备厚度为 9.7 nm 的 CuO 电阻转换层。该器件在 1 V 的读取电压下显示 10 ^-10 A的低导通电流。当电压增加到 ~3 V 时，观察到电流突然增加，对应于从高阻状态 (HRS) 切换到低电阻状态 (LRS)。之后，该设备仍保留在 LRS 中。在 10 ^{4 个}读取周期内未观察到 HRS 和 LRS 的退化。HRS/LRS电阻比为10 ⁶，数据保持时间超过10 ⁵s。电流突然增加不能由负偏压触发。CuO 层中 Ag 导电桥的形成负责电阻转换。进行统计分析以研究 HRS 和 LRS 中设定电压和电阻的分布。还研究了顺从电流对 Ag/CuO/n ⁺ -Si WORM 存储器工作电流的影响。发现载流子传输机制以肖特基发射、欧姆和 SCLC 传导为主。能量势垒为 1.066 eV，由肖特基发射分析提取。