In-free amorphous oxide semiconductors (AOS), such as ZnSnO (ZTO) are solution-processed for use in transistors and photodetectors (PDs). However, the device performance is much lower than that for a device that uses an In-based AOS (e.g. a-InGaZnO). This study determines the effect of ultraviolet (UV)/ozone (O₃) optical-annealing treatment on In-free amorphous ZnSnO (ZTO) metal–semiconductor–metal PDs using a sol–gel method. UV/O₃ optical-annealing for ZTO gel films allows the condensation process to be completed because organic- and hydrogen-based elements are fully decomposed, so the PDs have a relatively high responsivity of 11.3 A W⁻¹, an ultra-high photo-to-dark current ratio of 2090 and an improved response speed, with a decay time of 3.02 s. This work uses the UV/O₃ technique for AOS-based UV PDs and shows the potential for developing In-free AOS for other electronic and optoelectronic devices.

不含 In 的非晶氧化物半导体 (AOS)，例如 ZnSnO (ZTO) 经过溶液处理，可用于晶体管和光电探测器 (PD)。然而，器件性能远低于使用基于 In 的 AOS（例如 a-InGaZnO）的器件。本研究使用溶胶-凝胶方法确定紫外线 (UV)/臭氧 (O ₃ ) 光退火处理对无 In 非晶 ZnSnO (ZTO) 金属-半导体-金属 PD 的影响。ZTO凝胶薄膜的UV/O ₃光退火可以完成缩合过程，因为有机和氢基元素完全分解，因此PDs具有11.3 AW ^{-1 的}较高响应度, 2090 的超高光暗电流比和改进的响应速度，衰减时间为 3.02 s。这项工作将 UV/O ₃技术用于基于 AOS 的 UV PD，并展示了为其他电子和光电设备开发 In-free AOS 的潜力。