High switching fluctuation induced by the random formation and rupture of conductive filaments (CFs) is a critical issue for the development of organic-inorganic perovskite-based resistive switching (RS) memory devices. In this study, a rapid microwave-annealing method is developed to reduce grain boundaries (GBs) of CH₃NH₃PbI₃ (MAPbI₃) film and improve the switching reliability of the Au/MAPbI₃/FTO device. The crystal grain size of MAPbI₃ is increased and the corresponding GBs number is reduced with microwave irradiation time ranging from 40 to 120 s. In the optimized case, the dispersion of the RS parameters of the Au/MAPbI₃/FTO cell is greatly reduced. Specifically, the fluctuations of the high/low resistance states and SET/RESET voltages dropped from 70.4%/69.5% and 40.5%/40.3% to 20.1%/26.7% and 16.0%/11.9%, respectively. The device can be operated with reduced compliance current. These results demonstrate that reducing the number of GBs is a feasible strategy to reduce the randomness of the CFs, and thus achieve more stable RS performance in MAPbI₃-based memory devices.

由导电细丝 (CF) 的随机形成和破裂引起的高开关波动是开发基于有机-无机钙钛矿的电阻开关 (RS) 存储器件的关键问题。在这项研究中，一个快速微波退火方法进行显影，以减少CH的晶粒间界（GBS）₃ NH ₃碘化铅₃（MAPbI ₃）膜和改进的Au / MAPbI的切换可靠性₃ / FTO设备。MAPbI _{3 的}晶粒尺寸随着微波照射时间为40～120 s而增大，相应的GBs数减少。在优化的情况下，Au/MAPbI ₃的 RS 参数的分散/FTO 单元大大减少。具体而言，高/低电阻状态和SET/RESET电压的波动分别从70.4%/69.5%和40.5%/40.3%下降到20.1%/26.7%和16.0%/11.9%。该设备可以在降低的顺从电流下运行。这些结果表明，减少 GB 的数量是减少 CF 随机性的可行策略，从而在基于MAPbI ₃的存储设备中实现更稳定的 RS 性能。