Flip-chip (FC) aluminum gallium indium phosphide (AlGaInP) mini light-emitting diodes (mLEDs) with p and n lateral electrode structures and a larger light-emitting area have significant potential for integrating red, green, and blue mLEDs of locally dimmable zones for developing new-generation LED-backlit liquid crystal displays. Herein, an FC AlGaInP mLED having 9 6 mil dimensions is fabricated using wafer bonding and transfer technology methods. We propose a patterned n-gallium-arsenide (GaAs) epilayer by etching for ohmic contact and optimizing the specific contact resistance of an FC mLED. The light-output intensity images demonstrated that this etching process improved the uniformity of current distribution and matched the simulation results. Compared with conventional FC mLEDs, the output powers of FC mLEDs with a patterned n-GaAs layer increased from 3.4% to 4.5% and the wall-plug efficiency improved by 1.04%. Moreover, Ag was applied as a reflector on patterned n-GaAs rather than AuGe. The output power of FC mLEDs with an Ag reflector showed a 3.5%–8.2% improvement over FC mLEDs with an AuGe reflector. Finally, FC mLEDs that were encapsulated with epoxy and far-field radiation patterns indicated that packaged FC mLEDs had a smaller divergence angle and narrower viewing angle.

具有 p 和 n 横向电极结构和更大发光面积的倒装芯片 (FC) 铝镓铟磷 (AlGaInP) 微型发光二极管 (mLED) 在集成局部可调光的红色、绿色和蓝色 mLED 方面具有巨大潜力开发新一代 LED 背光液晶显示器的区域。在此，使用晶片键合和转移技术方法制造具有 9 6 mil 尺寸的 FC AlGaInP mLED。我们通过蚀刻欧姆接触并优化 FC mLED 的特定接触电阻，提出了图案化的 n 砷化镓 (GaAs) 外延层。光输出强度图像表明，这种蚀刻工艺提高了电流分布的均匀性，与模拟结果相符。与传统的 FC mLED 相比，具有图案化 n-GaAs 层的 FC mLED 的输出功率从 3.4% 增加到 4.5%，墙插效率提高了 1.04%。此外，Ag 被用作图案化的 n-GaAs 而非 AuGe 上的反射器。与带有 AuGe 反射器的 FC mLED 相比，带有 Ag 反射器的 FC mLED 的输出功率提高了 3.5%–8.2%。最后，用环氧树脂和远场辐射模式封装的 FC mLED 表明封装的 FC mLED 具有更小的发散角和更窄的视角。