In this work, the effects of a post-gate annealing (PGA) treatment on the electrical performance of AlGaN/AlN/GaN nanochannel high electron mobility transistors (NC-HEMTs) were analyzed, with various channel widths of 200, 400, 600, and 800 nm for a constant fill factor of 0.45. A systematic improvement in the DC parameters was observed in the NC-HEMTs after PGA treatment at 400 C for 10 min. Secondary ion mass spectroscopy was performed on the 300 C, 400 C, and 500 C for 10 min annealed and as-deposited NC-HEMT to optimize the PGA conditions. It was also verified that annealing at higher temperatures (>400 C) can cause the diffusion of the gate metal (Ni/Au) into the AlGaN/AlN/GaN active layer, which subsequently degrades the device performance. The removal of shallow traps after the PGA treatment, which were created by ICP dry etching, improved the Schottky barrier height () from 0.42 eV to 1.40 eV and resulted in a significant reduction in the reverse gate leakage current (I _G) of approximately more than three orders of magnitude in the NC-HEMT with a channel width of 200 nm. The reduction in the channel resistance after the PGA treatment, correspondingly improved the drift velocity, resulting in a marked improvement in the maximum transconductance (G _MMAX) of 34% and considerable incremental increases in the maximum drain current (I _DMAX). The NC-HEMT (W _NC = 200 nm) with PGA treatment exhibited decent performance, with an I _G of 9 A mm⁻¹, an I _DMAX of 470 mA mm⁻¹, a G _MMAX of 140 mS mm⁻¹, and an ON/OFF ratio (I _ON/I _OFF) of approximately along with improved gate controllability, i.e. lowering of the subthreshold swing to 69 mV dec⁻¹.

在这项工作中，分析了栅极后退火 (PGA) 处理对 AlGaN/AlN/GaN 纳米通道高电子迁移率晶体管 (NC-HEMT) 电性能的影响，通道宽度为 200、400、600、和 800 nm，恒定填充因子为 0.45。在 400°C 下 PGA 处理 10 分钟后，在 NC-HEMT 中观察到 DC 参数的系统改善。二次离子质谱在 300 C、400 C 和 500 C 下进行 10 分钟退火和沉积的 NC-HEMT，以优化 PGA 条件。还证实，在较高温度 (>400 C) 下退火会导致栅极金属 (Ni/Au) 扩散到 AlGaN/AlN/GaN 有源层，从而降低器件性能。PGA 处理后去除由 ICP 干蚀刻产生的浅陷阱，）从0.42电子伏特到1.40 eV和导致反向栅极漏电流（a显著减少余 _ģ的大约三个以上在NC-HEMT具有200nm的沟道宽度的数量级）。在PGA处理后的信道电阻的降低，相应地提高漂移速度，导致在最大跨导（一个显着的改善ģ _MMAX的34％）和在最大漏极电流（相当大的逐渐增加我 _DMAX）。的NC-HEMT（w ^ _NC = 200纳米）与PGA治疗表现出体面性能，与我 _ģ 9甲毫米^-1的，我 _DMAX470 mA mm ^-1的G _MMAX为 140 mS mm ^-1，开/关比 ( I _ON / I _OFF ) 大约为，同时提高栅极可控性，即将亚阈值摆幅降低至 69 mV dec ^-1 .