This work presents the effects of tri-methyl-aluminum (TMAl) injection during the metal-organic chemical vapor deposition growth of InGaN multi-quantum wells (MQWs). Three different MQW structures are grown on c-plane sapphire substrate. The grown structures are analyzed using high-resolution x-ray diffractometer, photoluminescence (PL), electroluminescence (EL) and atomic force microscope (AFM) techniques. It is found that MQW structure without TMAl injection is pseudomorphic at room temperature, with peak emission at ∼434 nm and EL at ∼438.8 nm. For TMAl-injected MQWs, partial relaxation is observed in the reciprocal space map. The multi-peak emission wavelengths in PL and EL are observed for TMAl-injected samples. Interestingly, the emission wavelengths are found to be red-shifted. AFM images of the grown MQW structures with Al injection suggest that the grown MQW layers are in 3D form, indicating the formation of nanostructures due to TMAl injection in the MQW layers.

这项工作展示了在 InGaN 多量子阱 (MQW) 的金属有机化学气相沉积生长过程中三甲基铝 (TMAl) 注入的影响。在c上生长了三种不同的 MQW 结构-平面蓝宝石衬底。使用高分辨率 X 射线衍射仪、光致发光 (PL)、电致发光 (EL) 和原子力显微镜 (AFM) 技术分析生长的结构。发现没有TMAl注入的MQW结构在室温下是假晶的，峰值发射在~434 nm，EL在~438.8 nm。对于注入 TMAl 的 MQW，在倒易空间图中观察到部分弛豫。对于注入TMAl的样品，观察到PL和EL中的多峰发射波长。有趣的是，发现发射波长发生红移。用 Al 注入生长的 MQW 结构的 AFM 图像表明，生长的 MQW 层呈 3D 形式，表明由于 MQW 层中的 TMAl 注入而形成了纳米结构。