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High-detectivity ultraviolet-B photodetector based on SnO2 thin film/Si heterojunction
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2021-07-23 , DOI: 10.1088/1361-6641/ac1051
Kenan Ozel 1, 2 , Abdullah Yildiz 2
Affiliation  

Composed of a metal oxide (MO x ) material-based emitter layer, p–n heterojunction photodetectors (HPDs) challenge their homojunction counterparts for use in new generation applications requiring high performance. Here, n-type SnO2 thin film is deposited on p-type Si (100) substrate to form a low-cost and high-performance HPD with its decent photo-sensing ability. The device responds to ultraviolet (UV)-B light under reverse bias as short as 40 ms. High detectivity of 1.38 1013 Jones, pronounced responsivity of 2.16 A W−1 and large UV/visible rejection ratio of 221 are found for the device. Eventually, these satisfactory figure of merits of the device disclose its superiority for selective-detection of weak optical signals in the UV-B regime of UV radiation spectrum.



中文翻译:

基于SnO2薄膜/Si异质结的高探测紫外-B光电探测器

p-n异质结光电探测器 (HPD)由基于金属氧化物 (MO x ) 材料的发射层组成,挑战其同质结对应物,以用于需要高性能的新一代应用。在这里,n型SnO 2薄膜沉积在p型Si(100)衬底上,以形成具有良好光敏能力的低成本和高性能HPD。该器件在短至 40 ms 的反向偏压下响应紫外 (UV)-B 光。1.38 10 13 Jones 的高探测度,2.16 AW -1 的显着响应度 该器件的紫外/可见光抑制比为 221。最终,该设备的这些令人满意的品质因数揭示了其在紫外辐射光谱的 UV-B 范围内选择性检测弱光信号的优越性。

更新日期:2021-07-23
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