Composed of a metal oxide (MO _x ) material-based emitter layer, p–n heterojunction photodetectors (HPDs) challenge their homojunction counterparts for use in new generation applications requiring high performance. Here, n-type SnO₂ thin film is deposited on p-type Si (100) substrate to form a low-cost and high-performance HPD with its decent photo-sensing ability. The device responds to ultraviolet (UV)-B light under reverse bias as short as 40 ms. High detectivity of 1.38 10¹³ Jones, pronounced responsivity of 2.16 A W⁻¹ and large UV/visible rejection ratio of 221 are found for the device. Eventually, these satisfactory figure of merits of the device disclose its superiority for selective-detection of weak optical signals in the UV-B regime of UV radiation spectrum.

p-n异质结光电探测器 (HPD)由基于金属氧化物 (MO _x ) 材料的发射层组成，挑战其同质结对应物，以用于需要高性能的新一代应用。在这里，n型SnO ₂薄膜沉积在p型Si（100）衬底上，以形成具有良好光敏能力的低成本和高性能HPD。该器件在短至 40 ms 的反向偏压下响应紫外 (UV)-B 光。1.38 10 ¹³ Jones 的高探测度，2.16 AW ^{-1 的}显着响应度 该器件的紫外/可见光抑制比为 221。最终，该设备的这些令人满意的品质因数揭示了其在紫外辐射光谱的 UV-B 范围内选择性检测弱光信号的优越性。