Traditional synthesis of InP core/shell quantum dots (QDs) suffers from high cost, high toxicity, and difficulty due to the use of the expensive and highly toxic tris(trimethylsilyl)phosphine (P(TMS)₃) as the phosphorus source. In this Perspective, we discuss advances in the design and synthesis of InP core/shell QDs using a cheap and low toxicity phosphorus source-tris(dimethylamino) phosphine (P(DMA)₃) as well as their applications in QD light-emitting diodes (QLEDs). Finally, we address the remaining challenges in the synthesis, optical properties, and stability of InP core/shell QDs and the performance of their QLEDs.

中文翻译：

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展望——使用三（二甲氨基）膦的高效磷化铟核/壳量子点的合成和发光二极管应用

InP核/壳量子点（QDs）的传统合成由于使用昂贵且剧毒的三（三甲基甲硅烷基）膦（P（TMS）₃）作为磷源而面临高成本、高毒性和困难。在这个视角中，我们讨论了使用廉价和低毒性磷源三（二甲氨基）膦（P（DMA）₃）设计和合成 InP 核/壳 QD 的进展及其在 QD 发光二极管中的应用（QLED）。最后，我们解决了 InP 核/壳 QD 的合成、光学特性和稳定性及其 QLED 性能方面的剩余挑战。