Single-layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapor deposition at process temperatures between 1000 and 1300 K is in situ investigated by photoelectron yield measurements. The growth kinetics is slower at higher temperatures and follows a tanh² law which better fits for higher temperatures. The crystal-quality of hexagonal boron nitride (h-BN)/Pt(111) is inferred from scanning low energy electron diffraction (x-y LEED). The data indicate a strong dependence of the epitaxy on the growth temperature. The dominant structure is an aligned coincidence lattice with 10 h-BN on 9 Pt(1 1) unit cells and follows the substrate twinning at the millimeter scale.

在 2 英寸 Pt(111)/蓝宝石晶片上生产单层六方氮化硼。通过光电子产率测量原位研究了硼嗪气相沉积在 1000 到 1300 K 之间的工艺温度下的生长。生长动力学在较高温度下较慢，并遵循更适合较高温度的 tanh ²定律。六方氮化硼 ( h- BN)/Pt(111)的晶体质量是从扫描低能电子衍射 (xy LEED) 推断出来的。数据表明外延对生长温度有很强的依赖性。主要结构是在 9 Pt(1 1)晶胞上与 10 h -BN对齐的重合晶格，并遵循毫米尺度的衬底孪晶。