Xenon emission in the spectral range of 120 – 800 nm upon excitation by subnanosecond voltage pulses is investigated. Excitation is performed using diffuse and spark discharges in an inhomogeneous electric field at a xenon pressure ranging from 0.3 to 3 atm. It is shown that xenon excitation by a series of successive 0.7-ns voltage pulses with a pause of 30 ns leads to a decrease in the second-continuum radiation intensity by the second and subsequent voltage pulses and an increase in the first-pulse afterglow intensity. It is confirmed that in the case of a pulsed diffuse discharge, the second continuum of xenon dimers, which is used to generate laser and spontaneous radiation in the VUV spectral region, makes the largest contribution to the radiation energy. Broadband radiation in the visible range (λ > 400 nm) is found to occur when the discharge is constricted. The obtained results indicate that the influence of the dynamic displacement current on the pin-diode caused a measurement error in the papers by V.I. Baryshnikov et al., who did not record the second-continuum radiation from xenon excited by a short homogeneous discharge.

研究了亚纳秒电压脉冲激发后 120 – 800 nm 光谱范围内的氙气发射。在氙气压力范围为 0.3 至 3 个大气压下，在不均匀电场中使用扩散和火花放电进行激发。结果表明，由一系列连续的 0.7 ns 电压脉冲激发的氙气，暂停时间为 30 ns，导致第二个和后续电压脉冲的第二连续谱辐射强度降低，而第一脉冲余辉强度增加. 经证实，在脉冲扩散放电的情况下，用于在 VUV 光谱区域产生激光和自发辐射的氙二聚体的第二连续谱对辐射能量的贡献最大。可见光范围内的宽带辐射 ( λ> 400 nm) 发现在放电收缩时发生。获得的结果表明，动态位移电流对 pin 二极管的影响导致了 VI Baryshnikov 等人的论文中的测量误差，他们没有记录由短时间均匀放电激发的氙气的第二连续谱辐射。