We investigate THz absorption properties of a graphene-based metamaterial structure composed of a graphene/SiC defect layer placed on one side of the periodic array of Si and SiO₂ layers. We demonstrate that the proposed structure can lead to perfect THz absorption because of strong photon localization in the defect layer of the structure. The maximal absorption value and corresponding frequency can be tuned by controlling the Fermi energy through a gate voltage. Moreover, the absorption peak value is insensitive to the incident angle and period number. The position of the THz absorption peak can be tailored by adjusting the thickness spacer layer SiC. By applying an external magnetic field, one can dynamically manipulate the left-handed circularly polarized (LCP) or right-handed circularly polarized (RCP) absorption. Our proposal may have potentially important applications in optoelectronic devices such as circular polarized wave sensors, photodetectors and absorbers.

我们研究了石墨烯基超材料结构的太赫兹吸收特性，该结构由放置在 Si 和 SiO ₂周期性阵列一侧的石墨烯 / SiC 缺陷层组成层。我们证明了所提出的结构可以导致完美的太赫兹吸收，因为该结构的缺陷层中存在强光子定位。通过栅极电压控制费米能量可以调整最大吸收值和相应频率。此外，吸收峰值对入射角和周期数不敏感。太赫兹吸收峰的位置可以通过调整间隔层 SiC 的厚度来定制。通过施加外部磁场，人们可以动态地操纵左旋圆极化 (LCP) 或右旋圆极化 (RCP) 吸收。我们的提议可能在光电子器件中具有潜在的重要应用，例如圆偏振波传感器、光电探测器和吸收器。