We systematically investigated the physical properties of amorphous Mo _x Si_1−x films deposited by magnetron co-sputtering. The critical temperature T _c of Mo _x Si_1−x films increases gradually with the Mo stoichiometry x, and the highest T _c = 7.9 K was found in Mo_0.83Si_0.17, where homogeneous films with the maximum Mo content can be obtained. The thick films of Mo_0.83Si_0.17 show surprising degradation in which the onset of zero-resistivity is suppressed below 2 K. The thin Mo_0.83Si_0.17films, however, reveal robust superconductivity even with thickness d ≈ 2 nm. We also characterized wide microwires based on the 2 nm thin Mo_0.8Si_0.2 films with wire widths 40 and 60 μm, which show single-photon sensitivity at 780 nm and 1550 nm wavelength.

我们系统地研究了通过磁控共溅射沉积的非晶 Mo _x Si _{1- x}薄膜的物理特性。Mo _x Si _{1- x}薄膜的临界温度T _c随着 Mo 化学计量x 的增加而逐渐增加，最高的T _c = 7.9 K 出现在 Mo _0.83 Si _{0.17 中}，其中可以获得具有最大 Mo 含量的均质薄膜。Mo _0.83 Si _0.17的厚膜显示出令人惊讶的退化，其中零电阻率的开始被抑制在 2 K 以下。薄 Mo _0.83 Si 然而，即使厚度d ≈ 2 nm ，_0.17薄膜也显示出强大的超导性。我们还表征了基于 2 nm 薄 Mo _0.8 Si _0.2薄膜的宽微线，线宽为 40 和 60 μ m，在 780 nm 和 1550 nm 波长下显示单光子灵敏度。