This study presents a multistep process of plasma-enhanced atomic layer deposition of ultrathin superconductive films of niobium nitride from metal organic precursor tris(diethylamido)(tert-butylimido)niobium(V). While using NH₃/Ar and H₂/Ar gas mixtures as reactants, a comprehensive analysis was performed pertaining to the influence of operating parameters, such as the duration of plasma exposure to the H₂/Ar reactant, gas-flow ratio, plasma exposure duration and power of inductively coupled plasma source for the NH₃/Ar reactant, on the obtained films’ parameters, such as resistivity, superconducting transition temperature and critical current density. Amorphous silicon oxide was used as the substrate. It was shown by experiments, that films’ resistivity affects the value of critical current density. As a result, the all-time record resistivity of 147 Ωcm was achieved for films with a thickness of 8 nm. When cooling in the Gifford McMahon closed-cycle cryostat, the values of superconducting transition temperature and critical current density were equal to 12.3 К and 9 МА/cm² at a liquid helium temperature, respectively.

本研究介绍了从金属有机前体三（二乙基酰胺）（叔丁基亚氨基）铌 (V) 制备的超薄氮化铌超导薄膜的等离子体增强原子层沉积多步工艺。在使用NH ₃ /Ar和H ₂ /Ar混合气体作为反应物的同时，对操作参数的影响进行了综合分析，例如等离子体暴露于H ₂ /Ar反应物的持续时间、气流比、等离子体NH ₃电感耦合等离子体源的暴露时间和功率/Ar 反应物，关于所得薄膜的参数，如电阻率、超导转变温度和临界电流密度。使用无定形氧化硅作为衬底。实验表明，薄膜的电阻率影响临界电流密度值。结果，创纪录的 147厚度为 8 nm 的薄膜达到了 Ωcm。当在 Gifford McMahon 闭环低温恒温器中冷却时，超导转变温度和临界电流密度值在液氦温度下分别等于 12.3 К 和 9 МА/cm ²。