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Angular vortex phase diagram in YBa2Cu3O7 films with c-axis correlated pinning centers
Superconductor Science and Technology ( IF 3.7 ) Pub Date : 2021-07-01 , DOI: 10.1088/1361-6668/ac0953
Tomoya Horide 1 , Yusuke Ichino 2 , Kaname Matsumoto 1
Affiliation  

High temperature superconductors (HTSCs) exhibit rich vortex phases under the influence of nanoscale pinning centers, and complicated configurations and behavior of vortices are realized by anisotropic vortex pinning, vortex interaction, and line tension. To understand the behavior and configurations of vortices, YBa2Cu3O7 films containing self-organized nanorods (BaSnO3, BaZrO3, BaHfO3) were prepared, and the critical current density and the resistivity were measured for varying angles between the nanorods (//c-axis) and the magnetic field (θ) in the temperatures of 65–90 K. The trapping angle of the strong nanorod (θ ts) determines the vortex phase boundary in the magnetic field lower than the matching field (B< B ϕ). While the large c-axis J c peak and the resistivity dip are observed for θ< θ ts due to the vortex accommodation on the nanorods, the vortices for θ> θ ts are pinned by the matrix uncorrelated defects and/or the ab-plane pinning centers. In the magnetic field higher than B ϕ(B> B ϕ), the weak matrix c-axis correlated defects such as twin boundaries accommodate vortices at the angles smaller than the trapping angle of the matrix c-axis correlated defect. Although the matrix c-axis correlated defects do not pin the matrix-vortices for the larger angles, the matrix-vortices are pinned by the vacant nanorod portions that appear due to the magnetic field tilt. This vortex retrapping results in the off-axis J c peak and the off-axis resistivity dip. Thus, the weak pinning by matrix defects, the cage potential, and the vortex retrapping as well as the strong nanorod pinning determine the angular vortex phase of the HTSCs containing c-axis correlated pinning centers.



中文翻译:

具有 c 轴相关钉扎中心的 YBa2Cu3O7 薄膜中的角涡旋相图

高温超导体(HTSCs)在纳米级钉扎中心的影响下表现出丰富的涡旋相,通过各向异性涡旋钉扎、涡旋相互作用和线张力实现了复杂的涡旋结构和行为。为了了解涡流的行为和配置,制备了含有自组织纳米棒(BaSnO 3、BaZrO 3、BaHfO 3)的YBa 2 Cu 3 O 7薄膜,并测量了纳米棒之间不同角度的临界电流密度和电阻率(// c轴) 和65–90 K 温度下的磁场 ( θ )。强纳米棒的俘获角 ( θ ts ) 确定低于匹配场 ( B < B ϕ )的磁场中的涡旋相边界。虽然由于纳米棒上的涡旋调节,在θ < θ ts观察到大的cJ c峰和电阻率下降,但θ > θ ts的涡旋被基质不相关的缺陷和/或ab平面固定钉扎中心。在磁场高于B ϕ ( B > B ϕ ),弱矩阵 c 轴相关缺陷,如孪晶界,以小于矩阵 c 轴相关缺陷的俘获角的角度容纳涡旋。尽管矩阵 c 轴相关缺陷不会将矩阵涡旋固定在较大的角度,但矩阵涡旋被由于磁场倾斜而出现的空纳米棒部分钉住。这种涡旋回捕导致离轴J c峰值和离轴电阻率下降。因此,基质缺陷的弱钉扎、笼电位和涡旋回捕以及强纳米棒钉扎决定了包含c轴相关钉扎中心的 HTSC 的角涡旋相位。

更新日期:2021-07-01
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