We study the density of states (DOS) inside superconducting Josephson SIsFS junctions with complex interlayer consisting of a thin superconducting spacer ’s’ between insulator I and a ferromagnetic metal F. The consideration is focused on the local DOS in the vicinity of a tunnel barrier, and it permits to estimate the current–voltage characteristics in the resistive state of such junctions. We study the influence of the proximity effect and Zeeman splitting on the properties of the system, and we find significant sub-gap regions with non-vanishing DOS. We also find manifestations of the 0-π transition in the behavior of DOS in a thin s-layer. These properties lead to the appearance of new characteristic features on I–V curves which provide additional information about electronic states inside the junction.

我们研究了具有复杂夹层的超导约瑟夫森 SIsFS 结内的态密度 (DOS)，该夹层由绝缘体 I 和铁磁金属 F 之间的薄超导间隔物 's' 组成。 考虑集中在隧道势垒附近的局部 DOS ，并且它允许估计这种结的电阻状态下的电流 - 电压特性。我们研究了邻近效应和塞曼分裂对系统特性的影响，我们发现了具有非消失 DOS 的显着子间隙区域。我们还在薄 s 层中的 DOS 行为中发现了 0- π跃迁的表现。这些特性导致在 I-V 曲线上出现新的特征特征，这些特征提供了有关结内电子状态的附加信息。