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‘Defect-irrelevant-winding’ no-insulation (RE)Ba2Cu3O7 − x pancake coil in conduction-cooling operation
Superconductor Science and Technology ( IF 3.7 ) Pub Date : 2021-06-23 , DOI: 10.1088/1361-6668/ac0759
Uijong Bong 1 , Jaemin Kim 1 , Jeseok Bang 1 , Jeonghwan Park 1 , Ki Jin Han 2 , Seungyong Hahn 1
Affiliation  

This paper reports experiment and simulation results of a ‘defect-irrelevant-winding (DIW)’ no-insulation (NI) (RE)Ba2Cu3O7 − x pancake coil operated in a conduction-cooling environment at temperatures lower than 77 K. The key idea of the DIW high-temperature superconductor (HTS) winding technique, firstly proposed in 2016, is to wind an NI pancake coil with HTS tapes, on purpose, containing multiple ‘defects.’ Using the defect (flawed) HTS tapes, we expect to significantly lower the construction cost of a DIW HTS magnet in marginal sacrifice of the magnet performance. In this study, charging tests of a DIW coil were performed in a conduction cooling system by controlling the temperature of the second stage in a range of 20–65 K, to determine the maximum operable current that avoids thermal runaway of the test coil at a given temperature. Coil terminal voltages, center fields, local temperatures, and power supply currents were carefully monitored during the tests, and the trend for each parameter was obtained. Also, by use of an equivalent circuit model, the test results were numerically analyzed to evaluate the effect of local defects on the overall performance of the test coil in order to validate the feasibility of the DIW HTS coil in operation under the conduction-cooling environment at temperatures lower than 77 K.



中文翻译:

传导冷却操作中的“与缺陷无关的绕组”无绝缘 (RE)Ba2Cu3O7 − x 扁平线圈

本文报告了“缺陷无关绕组 (DIW)”无绝缘 (NI) (RE)Ba 2 Cu 3 O 7 -  x 扁平线圈在温度低于 77 摄氏度的传导冷却环境中运行的实验和仿真结果K. 2016 年首次提出的 DIW 高温超导体 (HTS) 绕线技术的关键思想是故意用 HTS 胶带绕制 NI 扁平线圈,包含多个“缺陷”。使用有缺陷的(有缺陷的)HTS 胶带,我们希望显着降低 DIW HTS 磁体的建造成本,同时牺牲磁体性能。在这项研究中,通过将第二级的温度控制在 20-65 K 的范围内,在传导冷却系统中对 DIW 线圈进行充电测试,以确定最大可操作电流,以避免测试线圈在给定的温度。在测试过程中仔细监测线圈端电压、中心场、局部温度和电源电流,并获得每个参数的趋势。此外,通过使用等效电路模型,

更新日期:2021-06-23
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