A novel microfabricated ion trap chip that can geometrically minimize exposing trapped ions to stray charges on dielectric surfaces is developed. The new design utilizes a sloped loading slot to make the dielectric layers of the loading slot sidewalls invisible to the trapped ions. The designed loading slot is realized by applying silicon anisotropic etching processes, and the ion trap chip that contains the sloped loading slot is fabricated using microelectromechanical system processes. Stray charges induced by injecting an ultraviolet laser on the surface of the fabricated ion trap chip are experimentally characterized by measuring stray electric fields at the location of the trapped ions. The measured results are compared to those of a previous ion trap chip with a vertical loading slot. The magnitude of the measured stray electric field in the axial direction is within 1.5Vm⁻¹ for the proposed ion trap chip, whereas it is approximately 10Vm⁻¹ for the previously reported ion trap chip.

开发了一种新型微制造离子阱芯片，可以在几何上最大限度地减少将捕获的离子暴露于电介质表面上的杂散电荷。新设计利用倾斜的加载槽使加载槽侧壁的介电层对捕获的离子不可见。通过应用硅各向异性蚀刻工艺实现设计的加载槽，并使用微机电系统工艺制造包含倾斜加载槽的离子阱芯片。通过在制造的离子阱芯片的表面上注入紫外激光引起的杂散电荷通过测量被捕获离子位置处的杂散电场进行实验表征。将测量结果与具有垂直加载槽的先前离子阱芯片的结果进行比较。^-1对于提议的离子阱芯片，而对于先前报道的离子阱芯片，它大约为 10Vm ^-1。