We demonstrate p-type thin-film transistors (TFTs) on copper(I) oxide (Cu₂O) grown by plasma-enhanced atomic layer deposition (PEALD) with bis(N,N′-di-sec-butylacetami-dinato)dicopper(I) as the Cu precursor and oxygen (O₂) plasma as an oxidant. PEALD provides many if the advantages of other ALD processes, including uniformity and conformality, but with the additional ability to actively generate reactants and to add substantial energy from the plasma which may be important in defect control, low-temperature deposition. In this letter, Cu₂O films were grown on SiO₂/Si substrates under different substrate temperatures (160∼240 C) and post-deposition annealing was carried out under various temperatures (300∼1100 C) to improve the growth rate and crystallinity of the Cu₂O films. The fabricated p-channel bottom-gate Cu₂O transistors with a controlled thickness of 12 nm have high transparency over 90% and exhibit a subgap density of states (g(E)) of 7.2נ10¹⁸ eV⁻¹cm⁻³ near the valence band (E _V), contact resistivity (R _C) of 14 kΩmm, I _ON/I _OFF ratio of 2נ10³, and field-effect mobility of 0.1 cm²/Vs.

我们展示了在通过等离子体增强原子层沉积 (PEALD) 与双 (N,N'-二仲丁基乙酰氨基-dinato) 生长的氧化铜 (I) (Cu ₂ O ) 上的 p 型薄膜晶体管 (TFT )二铜（I）作为Cu前体，氧（O ₂）等离子体作为氧化剂。PEALD 具有其他 ALD 工艺的许多优点，包括均匀性和保形性，但还具有主动产生反应物和从等离子体中增加大量能量的额外能力，这在缺陷控制、低温沉积中可能很重要。在这封信中，Cu ₂ O 薄膜是在 SiO _{2 上}生长的/Si衬底在不同衬底温度（160～240℃）下和沉积后退火在不同温度（300～1100℃）下进行，以提高Cu ₂ O薄膜的生长速率和结晶度。所制造的p沟道的底栅的Cu ₂ O晶体管12的受控厚度纳米具有高透明度超过90％，并表现出状态的subgap密度（克（Ë 7.2נ10））¹⁸电子伏特^-1厘米^-3附近的价带 ( E _V )，接触电阻 ( R _C ) 为 14 kΩmm，I _ON / I _OFF比为 2נ10 ³，以及 0.1 cm ² /Vs的场效应迁移率。