We demonstrate experimental results based on time-resolved photoluminescence spectroscopy to determine the oscillator strength and the internal quantum efficiency (IQE) of InGaAs quantum dots (QDs). Using a strain-reducing layer, these QDs can be employed for the manufacturing of single-photon sources emitting in the telecom O-Band. The oscillator strength and IQE are evaluated by determining the radiative and non-radiative decay rates under the variation of the optical density of states at the position of the QD for InGaAs QDs emitting at wavelengths below 1 μm. For this purpose, we perform measurements on a QD sample for different thicknesses of the capping layer realized by a controlled wet-chemical etching process. From numeric modeling of the radiative and non-radiative decay rates dependence on the capping layer thickness, we determine an oscillator strength of 24.6 ± 3.2 and a high IQE of (85 ± 10)% for the long-wavelength InGaAs QDs.

中文翻译：

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用于在电信 O 波段发射的单光子源的 InGaAs 量子点的量子效率和振荡器强度

我们展示了基于时间分辨光致发光光谱的实验结果，以确定 InGaAs 量子点 (QD) 的振荡器强度和内部量子效率 (IQE)。使用应变减少层，这些 QD 可用于制造在电信 O 波段中发射的单光子源。对于发射波长低于 1 μ 的InGaAs QD，在 QD 位置的状态光密度变化下，通过确定辐射和非辐射衰减率来评估振荡器强度和 IQE 米。为此，我们对 QD 样品进行了测量，以通过受控湿化学蚀刻工艺实现不同厚度的覆盖层。从辐射和非辐射衰减率依赖于覆盖层厚度的数值建模，我们确定了 24.6 ± 3.2 的振荡器强度和长波长 InGaAs QD 的 (85 ± 10)% 的高 IQE。