Herein, we prepared Ga doped Ag₂Se flexible films on porous nylon membrane. First, Se nanowires (NWs) were wet chemically synthesized, then different amounts of Ga doped Ag₂Se (Ag_2-xGa_xSe, x = 0.01, 0.02, 0.04) NWs were prepared using the Se NWs as templates in solution at 80 °C, and finally the Ga doped Ag₂Se films on porous nylon membrane were fabricated by vacuum assisted filtration and then hot pressing at 230 °C and 1 MPa for 30 min. The Ag_1.98Ga_0.02Se film exhibits a higher power factor of ~1162 μW m⁻¹ K⁻² at 300 K and a superior flexibility: after bending for 1000 cycles around a 4-mm-radius rod, about 97% of the initial electrical conductivity is maintained.

在此，我们在多孔尼龙膜上制备了 Ga 掺杂的 Ag ₂ Se 柔性薄膜。首先，硒纳米线（NWS）是湿的化学合成，然后不同量的Ga掺杂的Ag ₂硒（AG _{2- X}镓_X SE，X  = 0.01，0.02，0.04）纳米线，使用硒纳米线作为在溶液制备的模板80 °C，最后通过真空辅助过滤在多孔尼龙膜上制备Ga 掺杂的 Ag ₂ Se 膜，然后在 230 °C 和 1 MPa 下热压 30 分钟。Ag _1.98 Ga _0.02 Se 薄膜表现出更高的功率因数，约为 1162 μW m ^-1  K ^-2 在 300 K 和出色的柔韧性下：围绕 4 毫米半径的棒弯曲 1000 次循环后，大约 97% 的初始导电率保持不变。