We fabricated p-i-n tunnel junction (TJ) contacts for hole injection on c-plane green micro-light-emitting diodes (micro-LEDs) by a hybrid growth approach using plasma-assisted molecular beam epitaxy (PA-MBE) and metal–organic chemical vapor deposition (MOCVD). The TJ was formed by an MBE-grown ultra-thin unintentionally doped InGaN polarization layer and an ${\mathrm{n}}^{++}/{\mathrm{n}}^{+}\text{-}\mathrm{GaN}$ layer on the activated ${\mathrm{p}}^{++}\text{-}\mathrm{GaN}$ layer prepared by MOCVD. This hybrid growth approach allowed for the realization of a steep doping interface and ultrathin depletion width for efficient inter-band tunneling. Compared to standard micro-LEDs, the TJ micro-LEDs showed a reduced device resistance, enhanced electroluminescence intensity, and a reduced efficiency droop. The size-independent J-V characteristics indicate that TJ could serve as an excellent current spreading layer. All these results demonstrated that hybrid TJ contacts contributed to the realization of high-performance micro-LEDs with long emission wavelengths.

中文翻译：

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PA-MBE 和 MOCVD 混合生长的具有 GaN 隧道结的高效绿色微型 LED

我们通过使用等离子体辅助分子束外延 (PA-MBE) 和金属有机化学的混合生长方法在c面绿色微型发光二极管 (micro-LED)上制造了用于空穴注入的 pin 隧道结 (TJ) 触点气相沉积 (MOCVD)。TJ 由 MBE 生长的超薄非故意掺杂 InGaN 偏振层和${\mathrm{n}}^{++}/{\mathrm{n}}^{+}\text{——}\mathrm{氮化镓}$ 激活层上 ${\mathrm{磷}}^{++}\text{——}\mathrm{氮化镓}$MOCVD 制备的层。这种混合生长方法允许实现陡峭的掺杂界面和超薄耗尽宽度，以实现高效的带间隧道效应。与标准微型 LED 相比，TJ 微型 LED 显示出更低的器件电阻、更高的电致发光强度和更低的效率下降。与尺寸无关的JV特性表明 TJ 可以作为极好的电流扩展层。所有这些结果表明，混合 TJ 触点有助于实现具有长发射波长的高性能微型 LED。