Microelectronics Journal ( IF 1.9 ) Pub Date : 2021-08-12 , DOI: 10.1016/j.mejo.2021.105202 Mingxing Du 1, 2 , Jinlei Xin 1 , Hongbin Wang 2 , Ziwei Ouyang 1 , Kexin Wei 1
Condition monitoring (CM) the insulated-gate bipolar transistor (IGBT) module is of vital significance to improve the reliability of power electronics system. Collector–emitter on-state voltage is a frequently employed failure precursor to identify the bond wire aging. In this paper, a method of separating is proposed to monitor the bond wire lift-off of IGBT module. Firstly, based on the circuit structure of IGBT module, the is divided into voltage drop across IGBT chip and voltage drop across bond wire . Secondly, the working principle of IGBT chip is investigated, and the calculation method of voltage drop across P-i-N diode is proposed. Finally, the is analyzed, and information provided by collector current at the – curve intersection point that is not affected by solder layer fatigue is adopted to monitor the lift-off degree of bond wire. The feasibility of the above methods is verified by theory and experiment.
中文翻译:
基于IGBT模块交点运动特性的键合线剥离监测
状态监测(CM)绝缘栅双极晶体管(IGBT)模块对于提高电力电子系统的可靠性具有重要意义。集电极-发射极通态电压是识别键合线老化的常用故障前兆。本文提出了一种分离方法建议监测 IGBT 模块的键合线剥离。首先,根据IGBT模块的电路结构, 分为IGBT芯片两端的压降 和键合线上的电压降 . 其次,研究了IGBT芯片的工作原理,以及PiN二极管两端压降的计算方法被提议。最后, 分析,集电极电流提供的信息 在 ——采用不受焊层疲劳影响的曲线交点来监测键合线的剥离程度。通过理论和实验验证了上述方法的可行性。