Condition monitoring (CM) the insulated-gate bipolar transistor (IGBT) module is of vital significance to improve the reliability of power electronics system. Collector–emitter on-state voltage $\left(V_{CE,ON}\right)$ is a frequently employed failure precursor to identify the bond wire aging. In this paper, a method of separating $V_{CE,ON}$ is proposed to monitor the bond wire lift-off of IGBT module. Firstly, based on the circuit structure of IGBT module, the $V_{CE,ON}$ is divided into voltage drop across IGBT chip $\left(V_{Chip}\right)$ and voltage drop across bond wire $\left(V_{BW}\right)$. Secondly, the working principle of IGBT chip is investigated, and the calculation method of voltage drop across P-i-N diode $\left(V_{PiN}\right)$ is proposed. Finally, the $V_{Chip}$ is analyzed, and information provided by collector current $\left(I_C\right)$ at the $I_C$–$V_{Chip}$ curve intersection point that is not affected by solder layer fatigue is adopted to monitor the lift-off degree of bond wire. The feasibility of the above methods is verified by theory and experiment.

状态监测（CM）绝缘栅双极晶体管（IGBT）模块对于提高电力电子系统的可靠性具有重要意义。集电极-发射极通态电压$\left({伏}_{C乙,哦N}\right)$是识别键合线老化的常用故障前兆。本文提出了一种分离方法${伏}_{C乙,哦N}$建议监测 IGBT 模块的键合线剥离。首先，根据IGBT模块的电路结构，${伏}_{C乙,哦N}$ 分为IGBT芯片两端的压降 $\left({伏}_{C\mathrm{小时}\mathrm{一世}磷}\right)$ 和键合线上的电压降 $\left({伏}_{乙宽}\right)$. 其次，研究了IGBT芯片的工作原理，以及PiN二极管两端压降的计算方法$\left({伏}_{磷\mathrm{一世}N}\right)$被提议。最后，${伏}_{C\mathrm{小时}\mathrm{一世}磷}$ 分析，集电极电流提供的信息 $\left({我}_C\right)$ 在 ${我}_C$——${伏}_{C\mathrm{小时}\mathrm{一世}磷}$采用不受焊层疲劳影响的曲线交点来监测键合线的剥离程度。通过理论和实验验证了上述方法的可行性。