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Surface engineering of CdS quantum dots modified SiO2@C3N4 nanospheres for effective photocatalytic hydrogen evolution
Materials Science in Semiconductor Processing ( IF 4.2 ) Pub Date : 2021-08-12 , DOI: 10.1016/j.mssp.2021.106134
Manzhou Hong 1, 2 , Lilei Zhang 2 , Haipeng Fang 2 , Xun Feng 2 , Zhongjun Li 1
Affiliation  

A new composite photocatalyst of SiO2@C3N4–CdS QDs was designed and synthesized, delivering enhanced hydrogen evolution performance. Under visible light irradiation, the hydrogen evolution rate of the photocatalyst is 225.1 μmol/g/h, which is about 80 times that of pure g-C3N4 and 2.1 times that of CdS. In this system, the g-C3N4 thin film was uniformly and compactly coated on the surface of the nanosphere with SiO2 as supporting template, which shortened the distance from the electron to the surface and accelerated the charge carrier transfer. Furthermore, the heterojunction formed by g-C3N4 and CdS QDs has a more suitable energy band structure and recover the scattered light near field of SiO2 nanospheres, which significantly enhances the light-trapping ability and the separation efficiency between electrons and holes. Consequently, the synergistic effect of SiO2, g-C3N4 and CdS QDs visibly improves the hydrogen evolution performance of photocatalyst.



中文翻译:

CdS 量子点修饰 SiO2@C3N4 纳米球的表面工程用于有效的光催化析氢

设计并合成了一种新型的 SiO 2 @C 3 N 4 –CdS QD复合光催化剂,可提高析氢性能。在可见光照射下,光催化剂的析氢速率为225.1 μmol/g/h,约为纯gC 3 N 4 的80倍和CdS的2.1倍。在该体系中,gC 3 N 4薄膜以SiO 2为支撑模板均匀致密地包覆在纳米球表面,缩短了电子到表面的距离,加速了电荷载流子的转移。此外,gC 3 N 4形成的异质结CdS QDs具有更合适的能带结构,回收SiO 2纳米球近场的散射光,显着增强了光捕获能力和电子与空穴的分离效率。因此,SiO 2、gC 3 N 4和CdS QDs的协同作用明显提高了光催化剂的析氢性能。

更新日期:2021-08-12
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