Chemical bath deposition has been used as a method to synthesize metal chalcogenide thin films. This method is being intensively studied, since chalcogenide films demonstrate an applied significance. Traditionally, the mechanism of this film growth is investigated by kinetic analysis. The role of diffusion processes, taking part in film formation, is much less investigated. In this paper the film growth is interpreted in terms of diffusion- and reaction-limited processes. Employing this approach, we consider the possibility of occurrence of the upward vertical diffusion for the Brownian particles towards the substrate working side and establish the maximum particle size. We propose and demonstrate the applicability of a method for determining the size and shape of islands of discontinuous ZnS, CdS and InSe films. The square root dependence of the continuous CdS film thickness as a function of the deposition time is experimentally confirmed for certain ammonia based solutions. Finally, we present results for the effect of immersion depth in case of diffusion limitation of the growth rate on the film thickness. The derived theoretical dependence on the depth is consistent with the experiment for the cadmium sulfide films deposited from the citrate solution.

化学浴沉积已被用作合成金属硫属化物薄膜的方法。这种方法正在被深入研究，因为硫属化物薄膜显示出应用的重要性。传统上，这种薄膜生长的机制是通过动力学分析来研究的。扩散过程在薄膜形成中的作用很少被研究。在本文中，薄膜生长被解释为扩散和反应受限过程。采用这种方法，我们考虑了布朗粒子向基板工作侧向上垂直扩散的可能性，并确定了最大粒径。我们提出并证明了一种确定不连续 ZnS、CdS 和 InSe 膜岛的大小和形状的方法的适用性。对于某些基于氨的溶液，实验证实了连续 CdS 膜厚度的平方根依赖性作为沉积时间的函数。最后，我们展示了在生长速率对薄膜厚度的扩散限制的情况下浸入深度影响的结果。推导出的对深度的理论依赖性与从柠檬酸盐溶液沉积的硫化镉膜的实验一致。